A process for reduction and simultaneous sintering in air was developed by a laser beam irradiation method, and VO
2 films were prepared from V
2O
5 printed on alumina substreates. Thick V
2O
5 films 40μm thick screen-printed on alumina substrates were irradiated by a ruby laser beam for 2ms in air at 350°C. The energy density of the beam was varied from 0 to 26J·cm
-2. X-ray analysis and measurement of the electrical resistance were carried out at various temperatures including the phase transformation temperature. The change of film thickness by the irradiation was measured also. Irradiation energy densities lower than 9J·cm
-2 caused only the sintering of V
2O
5 films. However, the reduction of V
2O
5 into lower oxides took place at the energy densities higher than 9J·cm
-2. By 9J·cm
-2 irradiation, a mixture of V
3O
7 and VO
2 was obtained. Between 10 and 26J·cm
-2, only VO
2 was obtained. In the latter case, concentration ratio of VO
2 to residual V
2O
5 in a specimen was estimated to be about 1:2. VO
2 crystals thus obtained had a tendency to orient with their [001]
r axes parallel to the substrate surface, where the suffix “r” indicates the axes for the rutile-type lattice. The logarithmic electrical resistance of specimens irradiated with 26J·cm
-2 beam decreased by a factor of 2.1 above the critical temperature. After 300 heat cycles between 40° and 100°C, the logarithmic resistance ratio decreased to 1.1. The lattice parameters and the unit volume were determined by X-ray analysis.
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