The structure analysis of polytypic titanium sulfide with stacking faults was attempted by the matrix method. Phase relations of the Ti-S system were examined by means of the composition-sulfur activity relation and the features of the analysed structures.
This report briefly introduces the growth techniques of Si and GaAs crystals in tha presence of a magnetic field. Since Hoshi et al, reported Czochralski (CZ) Si crystal growth in the presence of a transverse magnetic field in 1980, there extensive studies have been carried out by several groups. As for the apparatus for magnetic field application, a new technique is developed using a small coil to apply a vertical magnetic field to the melt. A new magnetic-applied apparatus using a superconducting magnet is also developed. Crystals with a homogeneous dopant distribution are realized by suppressing thermal convection and improving thermal symmetry by means of optimizing magnetic field strength and crystal and crucible rotation conditions. Oxygen concentration in CZ Si crystal is controlled to a large extent by applying the magnetic field. The potential for controlling the native defect density in Liquid Encapsulated Czochralski (LEC) Ga As crystal is also discussed.
Deformation and transformation textures (i. e. fracture, twinning, mosaicism, recrystallization, phase transformation, melting and evaporation) in naturally and artificially shocked mineral crystals have been reported. The main part of this report is devoted to a description of the shock-induced textures in olivine and some mineral crystals from some achondritic meteorites (i. e. two pallasites, one ureilite and two shergottites) by optical microscopic observation. Deformation textures in artificially shocked olivine crystals were also described. Planar fractures in the olivine crystals were discussed in conjunction with loss of strength at dynamic elastic limits.