Characterization of thin films with x-ray total reflection is introduced. Titanium silicite thin films are studied by grazing incidence x-ray diffraction. The epitaxial C49-TiSi
2 grains are formed on heavily BF
2 ion implanted Si (001) substrate after low temperature annealing, and they suppress the phase transition from C49 to C54 during high temperature annealing. SiO
2 thin films are investigated by x-ray reflectivity analysis. Thermal oxides have always the high density interface layer of -1 nm in thickness. Extremely thin native oxides on Si is also characterized in a function of chemical cleaning solutions.
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