Structural and physical properties of bulk and thin film samples in ZnO-In
2O
3 system are shown. Several homologous compounds Zn
kIn
2O
k+3 where k ≥ 3 for bulk system and where k ≥2 for thin film system were observed. Trends in electrical and optical properties, as functions of k in Zn
kIn
2O
k+3, were identified. The potential for metastable ZnIn
2O
4 (k = 1) was discussed. The existence of k = 1 and 2 crystalline members at [In] / ( [In] + [Ga] ) = 0.5, but not at [In] / ( [In] + [Ga] ) =1, together with the change in sign of the slope of the lattice constants at [In] / ( [In] + [Ga] ) = 0.5 suggests that Zn
kInGaO
k+3 would be the constitutive compounds, as opposed to the end members Zn
kIn
2O
k+3 and Zn
kGa
2O
k+3.
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