It is well known that B-site randomness contributes to the appearance of relaxor phenomena in the lead-based complex perovskite Pb(B'B")O
3. But the microscopic mechanism of the effect of B-site randomness on the systems has not been understood yet. Among the Pb(B'B")O
3 systems, Pb(In
1/2Nb
1/2)O
3(PIN) has drawn much attention because it can be in the antiferroelectric (AFE), ferroelectric (FE), or relaxor state depending on B-site randomness. We review the recent progress in our understanding of the effect of B-site randomness on PIN from the experimental viewpoint. As a conclusion of the arguments, we also introduce the frustration mechanism in Pb(B'B")O
3.
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