Journal of The Japan Institute of Electronics Packaging
Online ISSN : 1884-121X
Print ISSN : 1343-9677
ISSN-L : 1343-9677
Volume 15, Issue 4
Displaying 1-21 of 21 articles from this issue
Preface
2012 JIEP Award
Special Articles / Design and Simulation Technologies Seeking Three-Dimentional “Jisso”
Technical Papers
  • Noritaka Chiyo, Yuji Komine, Yasuhiro Tanaka, Atsuhiro Nishikata, Taku ...
    Article type: Technical Papers
    2012 Volume 15 Issue 4 Pages 263-270
    Published: July 01, 2012
    Released on J-STAGE: November 01, 2012
    JOURNAL FREE ACCESS
    We have developed an electromagnetic field intensity distribution measurement system. In this system, a very small temperature change distribution on the electromagnetic absorption screen is measured using an infrared camera. It is expected that this system will be very useful for the evaluation of the electromagnetic fields around electric devices. In this paper, a measurement of the electromagnetic field intensity distribution near an AC–DC converter is described. We could get a 3-D image of the electromagnetic field intensity distribution as a temperature change distribution on the screen. Furthermore, by measuring the near field of a micro strip line and a high frequency balance filter, the enhanced electromagnetic fields near these devices were clearly observed.
    Download PDF (13680K)
  • Fengqun Lang, Hiroshi Yamaguchi, Hiroshi Nakagawa, Hiroshi Sato
    Article type: Technical Papers
    2012 Volume 15 Issue 4 Pages 271-278
    Published: July 01, 2012
    Released on J-STAGE: November 01, 2012
    JOURNAL FREE ACCESS
    The commonly used electroless plated Ni(P) diffusion barrier is prone to react rapidly with Au–Ge eutectic solder to form NiGe, Ni5Ge3 and Ni3P intermetalics (IMC) at the solder/Ni(P) interface after aging at 330°C. The rapid growth of the Ni–Ge intermetalics and the subsequent oxidation of the Cu circuit path under the Ni(P) layer seriously degrade the joint of the Au–Ge solder/Ni(P) interface. To improve joint reliability, a 200 nm-thick Ni(P)/Ta/TaN/Ta diffusion barrier (DB) was prepared on the Ni(P) layer using a sputter process. SiC Schottky Barrier Diode (SBD) power devices were die bonded on the substrate with the Ni(P)/Ta/TaN/Ta DB in a vacuum reflow system. The bonded samples were aged at 330°C in air. After 1,000 hrs, little change in the bond strength of the SiC–SBD was observed. Little reaction between the Ni(P)/Ta/TaN/Ta DB and the Au–Ge solder was observed by transmission electron microscopy (TEM). The Ni(P)/Ta/TaN/Ta DB adheres well to the Ni(P) layer after a thermal cycling test of 1,079 cycles in the temperature range of −40–300°C.
    Download PDF (6158K)
  • Suguru Kato, Shinichi Sasaki, Kazunori Nakashima
    Article type: Technical Papers
    2012 Volume 15 Issue 4 Pages 279-282
    Published: July 01, 2012
    Released on J-STAGE: November 01, 2012
    JOURNAL FREE ACCESS
    In this paper, we examined the effectiveness of multi-valued transmission as a crosstalk reduction technique. In multi-value transmission, 4-value transmission is the most effective for crosstalk reduction. In addition, using a S-G-S micro-strip line that set up a grand line between single lines showed clearly that crosstalk reduction is possible, without decreasing the slew rate.
    Download PDF (2061K)
Tutorial Series - Current Topics of Analytical/Metrological Technics for Electronic Packaging / Part 2 (1)
Report
Report
Announcement, Contents, etc.
feedback
Top