The commonly used electroless plated Ni(P) diffusion barrier is prone to react rapidly with Au–Ge eutectic solder to form NiGe, Ni
5Ge
3 and Ni
3P intermetalics (IMC) at the solder/Ni(P) interface after aging at 330°C. The rapid growth of the Ni–Ge intermetalics and the subsequent oxidation of the Cu circuit path under the Ni(P) layer seriously degrade the joint of the Au–Ge solder/Ni(P) interface. To improve joint reliability, a 200 nm-thick Ni(P)/Ta/TaN/Ta diffusion barrier (DB) was prepared on the Ni(P) layer using a sputter process. SiC Schottky Barrier Diode (SBD) power devices were die bonded on the substrate with the Ni(P)/Ta/TaN/Ta DB in a vacuum reflow system. The bonded samples were aged at 330°C in air. After 1,000 hrs, little change in the bond strength of the SiC–SBD was observed. Little reaction between the Ni(P)/Ta/TaN/Ta DB and the Au–Ge solder was observed by transmission electron microscopy (TEM). The Ni(P)/Ta/TaN/Ta DB adheres well to the Ni(P) layer after a thermal cycling test of 1,079 cycles in the temperature range of −40–300°C.
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