The relations between steady state creep rate, ε
s, and temperature, T, stress, σ, internal stress, σ
ath, or effective stress, σ
th, were investigated with a stress dip technique in the strain rate from 10
-4 to 10
-2/sec between 300°C and 500°C. The results obtained are as follows:
(1) ε
s is expressed as ε
s =
A1σ
n exp (-
Q/
RT), where A
1 is a constant, n the stress exponent -4.7) and Q the activation energy for creep, equal to 35kcal/mol.
(2) σ
th and σ
ath are, respectively, related to σ in the expression, σ
th =
A4σ
1.3 exp (-
Q'th/
RT) and σ
ath =
A3σ
0.77 exp (σ'
ath/
RT), where
Q'
th and
Q'
ath were 3.1kcal/mol and 2.6kcal/mol, respectively. The ratio of Qath to σ decreases with an increase of stress and decreases with temperature when it is from 0.3 to 0.6.
(3) ε
s is also related to σ
th and σ
ath; ε
s =
A2σ
th3.6 exp (-
Qth/
RT) and ε
s =
A3σ
ath6.1 exp (-
Qath/
RT), where
Qath and
Qath are 24kcal/mol and 51kcal/mol, respectively. The discrepancy between the activation energy for self diffusion,
QSD, and
Qth is accounted for by considering the temperature dependence of the mobile dislocation density. The difference between
Qth and
QSD can also be explained by assuming that the average spacing between dislocations at subboundaries dereases with an increase in temperature.
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