巻号一覧
45 巻, 8 号
選択された号の論文の16件中1～16を表示しています
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頓田 英機, 川崎 獺雄1981 年 45 巻 8 号 p. 761-767
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーEtch grooves (EG) having two pits at both ends were revealed by dislocation etchants on zinc crystal faces {11\bar20} and {10\bar10} oxidized in air at room temperature. Results obtained are as follows: (1) Lattice defects which caused EG to appear were lamellar and parallel to {0001} planes. (2) The number and length of EG increased as the oxidation time increased. (3) EG did not appear on a chemically polished surface distant 50 μm from the oxidized surface. (4) EG took place preferentially in regions with low as-annealed dislocation density.
It was concluded that each EG corresponds to a stacking fault surrounded by an imperfect dislocation which is attributed to the vacancy supersaturation created in the crystals during the oxidation process.抄録全体を表示PDF形式でダウンロード (2080K) -
清水 肇, 古山 直行, 石田 洋一1981 年 45 巻 8 号 p. 768-775
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーIn order to study the mechanism of sputter-enhanced solute segregation, surface and matrix compositions of Cu-Ni alloys were measured after Ar ion bombardment up to 873 K by means of Auger electron spectroscopy (AES) and X-ray micro analysis (XMA). Sputtering at a high dose rate resulted in nickel enrichment on surface at all temperatures and all alloy compositions. At low dose rate, however, copper was segregated in the surface. The thickness of segregated copper layer was 4∼6 nm at 873 K that was too thick to be the Gibbsian equilibrium segregation. A layer depleted in copper ∼70 nm in thickness was observed beneath it. In order to know the deth profile, the composition change was analyzed and the enhanced diffusion was measured with a 40 at% coarse grained specimen (1∼2 mm in diameter). The enhancements of diffusion coefficients were 3.6×108, 1.3×104 and 19 at 573, 723 and 873 K, respectively. The apparent activation energy was only 22.6 kJ/mol. The small value suggested that the surface segregation was caused by the interstitial type diffusion mechanism.抄録全体を表示PDF形式でダウンロード (758K) -
横田 勝, 大畑 元嗣, 三谷 裕康1981 年 45 巻 8 号 p. 776-780
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーA widely applicable rate equation for the penetration of liquids into porous bodies has been introduced, and the experiment of penetration of pure water and aqueous sulphuric acids into sintered porous bodies of glass powder has been carried out in order to confirm the validity of the equation:
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\ oindentand the solution of the above equation is
(This article is not displayable. Please see full text pdf.)
\ oindentwhere h∞ (the equilibrium penetration height of a liquid into a porous body)=1⁄ρg·{2γcosθ⁄Re−3\sqrt2⁄4πRe2(Fx−F0)}, Ce (the shape factor of capillary tubes)=Te⁄32, Te (the tortuosity of capillary tubes)=6(1−p)·sinδ⁄π, and the other symbol marks are as follows: Fx and F0; the attractive forces acting between two powder particles determined by the neck size, v, h and t; the velocity and the height of penetrating liquid at time t, p; the porosity of a porous body, Re; the effective radius of capillary tube, η, γ and ρ; the viscosity, surface tension and density of a liquid, θ; the contact angle between solid and liquid, g; a gravitational accelaration, δ; the variable of Slichter’s model (π⁄3≤δ≤π⁄2), respectively.
Introducing the correction term to the capillary force acting on the penetrating liquids, the above described rate equation and it’s solution are generally applicable to all the cases of penetration process of liquids into the sintered porous bodies with various porosities.抄録全体を表示PDF形式でダウンロード (357K) -
渡辺 竜三, 増田 良道1981 年 45 巻 8 号 p. 781-789
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーQuantitative metallographic measurements have been made on the changes in the sintered structures of copper, iron and nickel powder compacts during final stage sintering. The relation between changes in grain and pore structures of these sintered metals has been analysed in terms of the pinning effect of the residual pores against grain boundary migration. The grain growth, in general expressed by the cubic power law, was promoted in the case of hydrogen sintering at higher temperatures or suppressed in the case of argon sintering, according to the decrease or increase in the pinning force. The suppression of the grain growth in argon sintering was considered to be due to intensive pinning effect by the small inshrinkable pores which were in equilibrium with the internal argon pressure. The grain size distributions, which showed a form skewed to the smaller size with a long tail to the larger size, were normalized to a stationary curve independent of sintering time when grain growth obeyed the cubic power law. On the other hand, the tails of the normalized distribution curves were observed to extend towards a larger grain size when promotion or suppression of the grain growth took place. Such a broadening of the grain size distribution curves was considered to be affected by the pinning force of the residual pores. Grain growth in porous metal compacts was confirmed to proceed in proportion to the pinning force parameter p⁄‾lV, where p is porosity and ‾lV is a mean pore intercept. No pore dragging by moving grain boundary was observed.抄録全体を表示PDF形式でダウンロード (768K) -
佐々木 豊重, 川口 将徳, 山根 政博, 杉之原 幸夫1981 年 45 巻 8 号 p. 790-796
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーStudies by X-ray photoelectron spectroscopy (XPS) have been carried out in order to make clear the structure of vitreous silicate. In a previous paper, three kinds of oxygen ions, i.e. O0, O− and O2−, were analyzed from the O1s XPS spectra for several compositions of lead silicate glass by using an electronic computer. In this paper, the analysis of various binary silicates, i.e. Li2O-, Na2O-, ZnO-, MgO-, CaO-, SrO- and BaO- SiO2 systems, were made by the same method. In each binary silicate the range of measured compositions was limited because of difficulty in making glassy samples. The different distribution of oxygen ions was, however, obtained in the present work. In the measurements of Na2O, CaO, SrO and BaO binary silicate glasses, the existence of O2− ion was not found, and this was in a good agreement with the theoretical distribution curve for O0 and O− ions. On the other hand, there existed evidently O2− ion in the Li2O, ZnO and MgO binary silicate glasses. This fact means that a large amount of O2− ion may exist in the binary silicate glass if the activity of metallic oxide is large.抄録全体を表示PDF形式でダウンロード (523K) -
坂本 芳一, 蒲原 敬1981 年 45 巻 8 号 p. 797-802
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーAn investigation of diffusivity and solubility of hydrogen in the annealed platinum foil has been carried out at the temperature range of 279 to 333 K by means of the electrochemical permeation method under the galvanostatic charging condition. The following results were obtained.
(1) The observed build-up transient curve of hydrogen permeation through Pt foil coincided with the theoretical curve derived under the boundary condition of the constant hydrogen concentration directly beneath the cathodic surface. The diffusion of hydrogen in Pt foil is the rate determining step in the permeation process.
(2) A slightly lower diffusivity was obtained, when the hydrogen was introduced at low cathodic current density ic, but the diffusivity value was almost constant in the range of ic=25 to 200 A·m−2. The hydrogen concentration beneath the cathode surface did not depend on the ic values. The hydrogen permeation current efficiency (J∞⁄ic) decreased with ic values, according to the relation of J∞⁄ic∝ic−0.8∼−0.9.
(3) The temperature dependences of the diffusivity (D) and the solubility of hydrogen (C) at ic=50 A·m−2 are described as follows:
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The hydrogen absorption in platinum occurs by the exothermic reaction.抄録全体を表示PDF形式でダウンロード (433K) -
里 達雄, 小島 陽, 高橋 恒夫1981 年 45 巻 8 号 p. 803-811
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーMicrostructures of pre-precipitates in an Al-3 mass%Cu single crystal alloy have been investigated by the lattice imaging technique using a high resolution electron microscope. In the early stage of aging, images of G.P.[1] zone with a typical structure of a single Cu-rich layer (single layer zone) and in the subsequent stages images of G.P.[2] zone, in which two Cu-rich layers are separated by three layers of Al (200) plane, were clearly observed. Moreover it was also observed that there coexisted pre-precipitates such as those having a many-Cu-rich-layer structure, or various periodic structures composed of Cu-rich layers and Al (200) planes, which are different and more complex than typical G.P.[1] and G.P.[2] zones structure.
Through precise measurements of the spacing of the lattice fringes adjacent to G.P.[1] and G.P.[2] zones, it was shown that the maximum lattice displacement in the normal direction is 9∼12% and that the displacement profile is asymmetrical on both sides of G.P.zones. A small displacement in the radial direction of G.P.zones was also observed.抄録全体を表示PDF形式でダウンロード (1464K) -
李 絏, 川野 豊1981 年 45 巻 8 号 p. 812-818
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーThe process of formation of graphite during cooling mainly in hyper-eutectoid Fe-C-Si alloys was studied. Some experiments were carried out to examine changes in the nodule number and the shape of graphite taking place under the effect of Mg addition and changing cooling rate below the solidus temperature.
Experimental results obtained were as follows:
(1) The nodule number of graphite formed in specimens with hyper-eutectoid composition decreased with decreasing cooling rate below the solidus.
(2) In case of specimens containing Mg, the shape of graphites was almost spherical in the initial stage of the formation process of graphites in the range of chemical compositions in the present work. This initial form of graphites, however changed into irregular shapes during cooling in the later stage only under the condition of slow cooling (8.3×10−3 K/s). This phenomenon more markedly appeared in the hyper-eutectoid composition than in the hypo-eutectic.
(3) In case of specimens containing no Mg, the shape of graphite changed from that agglomerated and like grain boundary to that like films and then to a flaky form with increasing total amount of C and Si.
(4) The results obtained suggest that the form of graphites mainly depends on the shape of precipitation sites of graphites which are defects such as grain boundary, voids and gas cavities.抄録全体を表示PDF形式でダウンロード (2467K) -
西 義武, 鈴木 謙爾, 増本 健1981 年 45 巻 8 号 p. 818-823
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーThe purpose of the present work is to evaluate the glass forming ability of Ni-Pd-P alloys by measuring the critical cooling rate for glass formation. Measurement of the quenching rate from the melt was made by using a modified piston-anvil type equipment. The cooling rate to obtain a perfectly amorphous phase was determined from the examination of the microstructure of the quenched sample by X-ray analysis and optical microscopy. With an addition of Pd up to 40 at% the critical cooling rate decreased significantly from about 106.6 K·s−1 extrapolated for Ni80P20 alloy to 102.8 K·s−1 for Ni40Pd40P20 alloy. Further addition of Pd increased it to 104.3 K·s−1 for Ni27Pd53P20 alloy. The effect of phosphorous on the critical cooling rate was remarkably large and the minimum value was obtained at 20 at%P. Such composition dependence of the critical cooling rate can be explained in terms of the change in the liquidus temperature and the viscosity of undercooled liquid.抄録全体を表示PDF形式でダウンロード (564K) -
池田 徹之, 西 成基1981 年 45 巻 8 号 p. 824-831
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーThe gravity diecasting method was used for the rapid solidification of Al-5 to 50 mass%Sn-1 mass%Cu alloys. The cooling and solidification processes were measured by a thermal analysis apparatus for rapid cooling, and analyses were made for the solidified structures.
Results obtained are summarized as follows:
(1) When Al-5 to 50 mass%Sn-1 mass%Cu alloys were solidified by rapid cooling at cooling rates of 100 K/s to 3500 K/s, changes in the structural morphology were found, such as the granular Sn structure, the granular Sn and flaky Sn, the flaky Sn and massive Sn, the incomplete network Sn and the complete network Sn.
(2) In low Sn alloys less than 6 mm in thickness (above 400 K/s), the structure of very finely dispersed Sn phase was formed. In high Sn alloys less than 4 mm in thickness (above 1000 K/s), on the other hand the structure of ω phase dispersed to the extent of 2 μm to 5 μm was formed.抄録全体を表示PDF形式でダウンロード (1140K) -
池田 徹之, 西 成基1981 年 45 巻 8 号 p. 832-840
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーA rapid thermal analysis was made for Al-5 to 50 mass%Sn-1 mass%Cu alloys. The mechanism and process of the rapid solidification were analyzed in a wide range of the solidification temperature.
Results obtained are as follows:
(1) The rapid solidification process at cooling rates of 100 K/s to 3500 K/s followed a close-packed hexagonal model at a solid fraction less than 0.906 (solidification mode (I)) and contractile coaxial circles models at the fraction more than 0.906 and less than 0.956 (solidification mode (II)) and at the fraction more than 0.957 and less than 1 (solidification mode (III)).
(2) In the early stage of the local solidification, ω phase was grown very rapidly from the supercooled liquid phase, in the middle stage shapes of Sn phase were determined by the growth rate of ω phase, and in the last stage Sn phase was crystallized from the residual liquid phase as divorced eutectics at a constant temperature.抄録全体を表示PDF形式でダウンロード (597K) -
大貫 仁, 添野 浩1981 年 45 巻 8 号 p. 841-846
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーIn the construction of diodes, n+ type surfaces of Si wafers are frequently brazed to metal contact discs (W or Mo) by using Al solder. After brazing, the diodes exhibit a large forward voltage drop (FVD). This is due to a p type regrowth layer formed on the n+ type Si from the melt. It is considered to be very important to reduce dissolution of the n+ type Si into the Al melt, since FVD in diodes is strongly affected by the regrowth layer and the n+ type surfce concentration. From this point of view, the effect of thickness of Al, the brazing temperature, use of Al solder containing Si, and the P concentration in the n+ type Si on FVD of diodes have been investigated. The following results have been obtained. (1) FVD in diodes is considerably increased with increasing brazing temperature. This tendency becomes more remarkable as the P concentration in the n+ type Si of diodes bceomes low. (2) FVD in diodes is also increased with increasing thickness of Al. (3) FVD in diodes is decreased by using Al-11.7%Si instead of Al because of the reduction of Si dissolved in liquid Al.抄録全体を表示PDF形式でダウンロード (461K) -
川勝 一郎, 大沢 直, 五十嵐 修1981 年 45 巻 8 号 p. 847-852
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーThe viscosity of molten Pb-Sn solders and ZnCl2-NH4Cl fluxes were investigated in relation to the solderability. The viscosity was measured with a special designed apparatus using the rotation cylinder method. The solderability was evaluated by both the spreading area of the molten solder on a copper plate and the capillary height of the molten solder penetrated into a gap between two parallel copper plates.
Results obtained are summarized as follows:
(1) A clear correlation was not found between the viscosity of the molten solder and the spreading area of the solder on the copper plate.
(2) The viscosity of flux had an effect on the spreadability of the solder in the temperature range of active flux action, and the lower the viscosity, the larger the spreading area.
(3) The viscosity of the molten solder had an effect on the capillary height of the solder, and hence the lower the viscosity, the higher the capillary height.
(4) Any clear correlation was not found between the viscosity of the molten flux and the capillary height of the molten solder.抄録全体を表示PDF形式でダウンロード (432K) -
三輪 謙治, 市川 理衛1981 年 45 巻 8 号 p. 853-859
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーAl-Si binary alloys of various Si compositions were stirred with a rotor at 0.83∼12.5 s−1 during continuous cooling from the liquid to the partially solidified state, and the slurry in which primary crystals were suspended was obtained. Relations between the apparent viscosity obtained as a value of torque and the structure of the slurry were studied. Results obtained are as follows.
(1) Primary α crystals became finer under stirring with increasing Si composition and with increasing revolution speed of the rotor in the hypo-eutectic alloys such as Al-2, 5, and 8%Si alloys.
(2) Eutectics became massive in the Al-12.5%Si eutectic alloys and grew somewhat coarser as the eutectic reaction progressed, and the torque value increased with progress of the eutectic reaction.
(3) Eutectics enriched in α phase crystallized spherically so as to surround the primary Si crystal with progress of the eutectic reaction and with increasing revolution speed in the hyper-eutectic alloys such as Al-17%Si alloys.
(4) The torque value was not increased with increasing volume fraction of the primary Si crystals and was markedly increased with growth of the massive eutectics containing the primary Si crystals in the Al-17%Si alloys.抄録全体を表示PDF形式でダウンロード (842K) -
稲数 直次, 山本 久1981 年 45 巻 8 号 p. 860-866
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーIn order to study the formation process of drawing texture of 17Cr-12Ni and 18Cr-10Ni-3Cu stainless steels, measurements of a drawing force were carried out and the orientation change occurring during the drawing was investigated using the pole figure with various reductions in area. The induced martensite (ε) was observed in an early stage during the drawing, and preferred orientations (111)[\bar1\bar12] and (111)[11\bar2] were developed by drawing up to about 40% reduction in area. As the drawing ratio increases, the main orientation was accompanied with the {011}⟨112⟩ component. It was found that the slip rotation mentioned above results in relaxation of the drawing stress. The ⟨111⟩ fiber texture developed by drawing up to about 83% was accompanied with stable orientations {112}⟨111⟩ and {011}⟨111⟩. The increase of a wire strength was expected by development of the ⟨111⟩ fiber texture.
The formation process of the drawing texture was explained by considering the relative resolved shear stress under the biaxial stress condition.抄録全体を表示PDF形式でダウンロード (879K) -
昆 謙造, 辻川 茂男, 久松 敬弘1981 年 45 巻 8 号 p. 867-868
発行日: 1981年
公開日: 2008/04/04
ジャーナル フリーPDF形式でダウンロード (276K)
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