When a n
+-type surface of a diode is bonded to a tungsten or molybdenum electrode using aluminum solder, a thin p-type regrowth layer is formed on the n
+-type silicon after bonding. This layer formation generates a considerable forward voltage drop (FVD) in the regrowth layer.
In order to clarify the role of phosphorous in brazing between n
+-type silicon and aluminum, effects of P concentration on the thickness and the electrical property of regrowth layer have been investigated.
The P concentrations in n
+-type silicon of diodes were 1×10
20 cm
−3, 4×10
20 cm
−3 and 2×10
21 cm
−3. Brazing atmospheres used were N
2, air and vacuum. In the case of brazing in N
2 atmosphere, the thickness of regrowth layer is increased with increasing P concentration in n
+-type silicon. Difference in the thickness and the morphology of regrowth layer between n
+-type silicon with high P concentration and that with low P concentration, becomes more remarkable by brazing in air. On the other hand, in the case of brazing in vacuum, the thickness of regrowth layer is nearly the same independent of P concentration. These results indicate that cleaning action in the interface between molten aluminum and n
+-type silicon is greatly promoted by the presence of P. It is also found that in n
+-type silicon with high P concentration, the junction formed between regrowth layer and n
+-type silicon is more imperfect than that of n
+-type silicon with low P concentration.
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