Silicon isotope separation from hexafluorodisilane (Si
2F
6) has been examined using CO
2 pulse laser. Si
2F
6 containing specific isotopes was preferentially decomposed to SiF
4 depending on the wavenumber of the laser.
29Si and
30Si were concentrated in the SiF
4 produced at 945-955 cm
−1 while the SiF
4 slightly enriched with
28Si was obtained at 970-980 cm
−1. The SiF
4 containing
30Si and
29Si with an enrichment factor of 14.0 and 2.63, respectively, at maximum was continuously produced with a yield efficiency of 4.4% at 951.203 cm
−1 and 9.6% at 956.205 cm
−1, under the flow rate of 16.7 mm
3s
−1 and pressure of 26.6 Pa for the inlet Si
2F
6. These enrichment factors correspond to the isotopic oncentrations of 43.3% and 12.3% for
30Si and
29Si, respectively. A higher concentration than 97.6% with an enrichment factor of 1.06 is attained for
28Si in the residual Si
2F
6 after irradiating at 951.203 cm
−1 followed by 956.205 cm
−1. The dependence of silicon isotope enrichment on the wavenumber could be explained by the difference in apparent decomposition rate for the reaction of Si
2F
6+nhν→SiF
4+SiF
2 between six isotopic species such as
28Si
28SiF
6,
28Si
29SiF
6,
28Si
30SiF
6,
29Si
29SiF
6,
29Si
30SiF
6 and
30Si
30SiF
6 in Si
2F
6 from the mass balance analysis of the experimental results.
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