日本結晶成長学会誌

表紙

原稿種別: 表紙
1989 年 15 巻 3-4 号 p. Cover1-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_Cover1

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日本結晶成長学会定款

原稿種別: 付録等
1989 年 15 巻 3-4 号 p. App1-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_App1

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目次

原稿種別: 目次
1989 年 15 巻 3-4 号 p. Toc1-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_Toc1

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CONTENTS

原稿種別: 目次
1989 年 15 巻 3-4 号 p. Toc2-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_Toc2

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特集「原子レベルの結晶成長機構」によせて

春日正伸

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 261-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_261

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多核様式成長過程におけるBack-Force Effect

有馬義康, 入沢寿美

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 262-270
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_262

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On growth of singular surface of crystal, the surface diffusion process plays an important role. The back-force effect is a reduction of the localized driving force due to the presence of the steps as sinks for the growth units on the surface. Introducing it into the BCF's spiral growth theory, the expansion of the interstep distance is caused and therefore the growth rate is reduced. In nucleation growth process, it causes significant reduction of the two-dimensional nucleation rate on the surface. Moreover, on already existing nucleus, the critical size of nucleus is greater than one derived from conventional nucleation theory. It may be called the effective critical radius. On the perfect surface, two-dimensional nucleation occurs here and there and may occur also on growing nucleus.

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ステップの量子的相互作用

上羽牧夫

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 271-279
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_271

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Interaction of steps determines step distribution of a crystal in growth (melting) as well as in equilibrium. Thereby it controls the growth law and the crystal shape. Among various kinds of step interactions, the molecular potential of the rigid lattice, the elastic interaction and the interaction due to statistical fluctuation of steps are common and believed to be important. They depend on the step distance d as 〜d^<n+3> (n: power of the molecular potential), 〜d^<-2> and 〜d^<-2>, respecuvely. In a quantum system, a step is viewed as an oscillating string accompanied by superfluid flow. When there are many parallel steps, the oscillation spectrum is modified by the interference of the flow, and as a result the zero-point energy increases, leading to a 〜d^<-2> repulsion of steps.

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ステップのゆらぎの統計力学

阿久津典子, 阿久津泰弘

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 280-287
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_280

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Fluctuation properties of anisotropic one-dimensional interfaces, whose typical example are the steps on a crystal surface, are discussed from a statistical-mechanical point of view. For global fluctuations, general relationship between the scaled global interface width, the interface stiffness and the curvature of the equilibrium shape is established. For local fluctuations, the intrinsic interface structure is studied by Monte-Carlo method. Based on the detailed temperature dependence and the system size dependence, critical behavior of the intrinsic structure is discussed.

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分子動力学法によるMBE結晶成長シミュレーション

原久美子, 寺倉清之

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 288-297
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_288

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Recent works on the molecular-dynamics simulations for the molecular-beam epitaxy (MBE) for the Lennard-Jones and silicon systems are reviewed. The information about the dynamics of the MBE process in the atomistic scale is very hard to obtain by experiments and therefore the molecular-dynamics simulation plays a crucial role in this regard. As for the Lennard-Jones systems, discussions are made on the dependences of the MBE growth pattern on the crystal face of the substrate surface, the substrate temperature and the size mismatch between the incident and substrate atoms. In particular, it is demonstrated that the growth pattern changes systematically as the size mismatch changes. In contrast to these successful model calculations, a realistic simulation for Si has some unsolved problems.

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投影表面自由エネルギー密度と結晶の平衡形

大鉢忠

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 298-310
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_298

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Recent analytical methods to determine the equilibrium form of crystals are reviewed. Yamada's contribution for a terrace ledge kink (TLK) model is presented. The step density on a vicinal face, which is introduced by him, is related to the orientation |p| of the surface. The concept of the projected surface free energy density β is also introduced by Yamada. Step energy and interaction between steps are considered to the calculation of the projected surface free energy density. Andreev's Legendre-transformed surface free energy density gives the shape of equilibrium form. Garcia, Saenz and Cabrera racognized the idea of Legendre transformation independently. Cabrera's expansion of β by |p| is used to determine the equilibrium form of α-Ag_2S by using the Legendre transformation of crystal shape.

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気相から成長する氷結晶の成長機構と形

権田武彦, 清忠師

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 311-321
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_311

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The growth mechanism of ice crystals growing at low air pressure is experimentally studied and the mechanism of the habit change with temperature of ice crystals is discussed. By repeating the growth and the evaporation of the same ice crystal at a constant temperature, the normal growth rates of the {1010} an {0001} faces of the ice crystal versus supersaturation are measured and compared with the various growth theories. The surface structure of an ice crystal growing or evaporating at a constant temperature is studied in situ. It is found from the present experiments that at a temperature of 0 to -2℃, the {1010} and {0001} faces of ice crystals growing at low air pressure grow by the V-QL-S mechanism, while at a temperature of -2 to -30℃, they grow by the BCF mechanism.

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微粒子・原子層成長過程の高分解能・超高真空電子顕微鏡による"その場"観察

高柳邦夫, 谷城康真, 秋山和弘

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 322-326
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_322

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Growths of Au cluster and Au surface seen at atomic level by high resolution UHV electron microscopy are briefly summarized. Au clusters consisting of several atoms are directly seen during growth on a graphitized carbon and they show rapid structure change even at room temperature. On a stepped (110) surface, bilayer step growth is seen, which is closely related with the stability of the (110) surface having the 2 x 1 missing-row reconstructed structure.

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ZnO/サファイアの気相成長におけるエピタキシャル関係

春日正伸, 井内真

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 327-333
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_327

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The crystallographic relationship of hetero-epitaxial films of zinc oxide to sapphire was investigated for a vapor phase growih system. Zinc oxide layers were deposited on (0001), (1120), (1102), (1014) and spherical substrates of α-Al_2O_3 single crystal by a chemical transport reaction ZnO and H_2. Characterization of these layers by Laue back diffraction, microscopy and laser light figures revealed multrple mode heteroeprtaxy. A number of types of epitaxial relationship are summarized finally into six modes. The prevalence of these epitaxial modes was interpreted in terms of two kinds of index, the standard deviation of displacement and the atomic density ratio both of which are based on the correspondence of atomic sites of Zn and Al in the layer grown and the substrate, respectively.

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MOVPE法によるサファイヤ基板上へのGaN結晶成長におけるバッファ層の効果

平松和政, 天野浩, 小出典克, 赤崎勇

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 334-342
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_334

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High quality GaN film with a smooth surface free from hillocks , pits and cracks can be grown epitaxially on a sap-phire substrate by metalorganic vapor phase epitaxy (MOVPE) usingd a thin AlN buffer layer. The initial growth stage of GaN film with and without the buffer layer is studied in detail. It is found that the most essential role of the buffer layer is ( I ) supply of the nucleation centers with the same crystal orientation as the substrate and (2) promotion of the lateral growth of GaN due to the decrease in an interfacial free energy between the substrate and the GaN film.

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アルカリハライド下地上での薄膜のグラフェオピタキシー

大坂敏明, 粕壁善隆, 國司徹, 佐藤正人, 山本一雄

原稿種別: 本文
1989 年 15 巻 3-4 号 p. 343-354
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_343

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Thin films of tin were prepared by vacuum depositon on UHV-cleaved NaCl, KCl and KBr substrates at room temperature. Particles of tin grew graphoepitaxially on the steps of these substrates, whereas they grew epitaxially on the flat areas of the KCl and KBr substrates and oriented almost randomly on the flat area of the NaCl substrate. Monatomic spiral steps were prepared by ultrahigh vacuum sublimation of these substrates cleaved in ultrahigh vacuum. The results obtained from the particles of tin and indium deposited onto the respective spiral steps are as follows: The particles of tin were epitaxially grown on the monatomic steps of the KCl and KBr substrates, whereas the particles on the NaCl substrate were graphoepitaxially grown on a monatomic step. On the other hand, the particles of indium grew graphoepitaxially on the monatomic steps of all the substrates, though on the flat areas of the KCl and KBr substrates the particles grew in a random state and they grew epitaxially on the flat area of the NaCl substrate.

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訂正

原稿種別: 文献目録等
1989 年 15 巻 3-4 号 p. 355-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_355_1

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本会記事

原稿種別: 文献目録等
1989 年 15 巻 3-4 号 p. 355-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_355_2

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本会記事

原稿種別: 付録等
1989 年 15 巻 3-4 号 p. 356-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_356_1

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催物案内

原稿種別: 付録等
1989 年 15 巻 3-4 号 p. 356-357
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_356_2

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日本結晶成長学会誌投稿規定

原稿種別: 付録等
1989 年 15 巻 3-4 号 p. 358-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_358

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日本結晶成長学会入会のご案内

原稿種別: 付録等
1989 年 15 巻 3-4 号 p. App2-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_App2

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裏表紙

原稿種別: 表紙
1989 年 15 巻 3-4 号 p. Cover2-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_Cover2

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CONTENTS

原稿種別: 表紙
1989 年 15 巻 3-4 号 p. Cover3-
発行日: 1989/01/25
公開日: 2017/05/31

DOIhttps://doi.org/10.19009/jjacg.15.3-4_Cover3

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