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Masahide Sato, Makio Uwaha
Article type: Article
1999Volume 26Issue 2 Pages
45-
Published: July 01, 1999
Released on J-STAGE: May 31, 2017
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We study the growth law of step bunches induced by the drift of adatoms with evaporation taken into account. We use the step now model and carry out numerical integration of the step velocity. When the drift velocity is large, the average terrace size grows as t^β with βap1/2 similary to the case without evaporation. When the drift velocity is small, the average terrace size grows with βsmaller than 1/2 in the initial stage and saturates in a late stage.
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K Matsumoto, T Irisawa
Article type: Article
1999Volume 26Issue 2 Pages
46-
Published: July 01, 1999
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The stable cluster size and territory for Volmer-Weber growth mechanism are investigated by Monte Carlo simulation. It is shown that the chemical potential dependence for the cluster size shows a different tendency by the surface diffusion treatments.
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Noriko Akutsu, Yasuhiro Akutsu
Article type: Article
1999Volume 26Issue 2 Pages
47-
Published: July 01, 1999
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We study the adatom system on (111) surface of diamond crystal structure. As a model of the adatom system, we consider two-dimensional hexagonal lattice gas model with excluded volume restriction among adatoms sitting on T_4 sites and H_3 sites. We calculate thermodynamical quantities of the lattice gas models in disordered phase by product-wave-function renormalization group (PWFRG) method. We apply the results to Si (111) surface.
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Naoyuki Kinoshita, Noriko Akutsu, Yasuhiro Akutsu
Article type: Article
1999Volume 26Issue 2 Pages
48-
Published: July 01, 1999
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We made a Monte Carlo calculation of the two-dimensional hexagonal lattice gas model with excluded volume restriction among adatoms sitting on T_4 sites and H_3 sites. We compare the result with the one obtained by numerical renormalization group method.
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Tomonori Ito, Kenji Shiraishi, Akihito Taguchi
Article type: Article
1999Volume 26Issue 2 Pages
49-50
Published: July 01, 1999
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Adsorption behavior on GaAs surfaces is theoretically investigated in conjunction with thin film growth Simulation. Based on the ab initio calculations. Electron counting Monte Carlo (ECMC) simulation successfully predicts adsorption behavior of Ga, As and Si on various GaAs surfaces including (001) and (111) A. This implies that quantum mechanical approach is indispensable for clarifying adsorption behavior on semiconductor surfaces.
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Masahide Sato, Makio Uwaha
Article type: Article
1999Volume 26Issue 2 Pages
51-
Published: July 01, 1999
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We study the behavior of an unstable vicinal face formed by the drift of adatoms. When the drift is in the down-hill direction and exceeds critical strength, the vicinal face is linearly unstable to long wavelength fluctuations. When the vicinal face is unstable only to the fluctuations perpendicular to the steps, ripples appear in the initial stage. The term that breaks the symmetry of the system suppresses the fluctuation along the step and produces a bunch-like structure in a late stage.
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Noriko Akutsu, Yasuhiro Akutsu, Takao Yamamoto
Article type: Article
1999Volume 26Issue 2 Pages
52-
Published: July 01, 1999
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We study vicinal surface of Ising coupled restricted solid-on-solid (RSOS) model by product-wavefunction renormalization group method. We regard the Ising system represents a monolayer lattice gas system of adsorption. We obtained step smoothening transition where step stiffness diverges.
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Takao Yamamoto, Yasuhiro Akutsu, Noriko Akutsu
Article type: Article
1999Volume 26Issue 2 Pages
53-
Published: July 01, 1999
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Essential statistical-mechanical properties of vicinal surfaces are described by the "universal" free-Fermion picture. In this picture, the step smoothening transition is regarded as a change of the dispersion relation of the Fermion. On the basis of this idea, we analyze the step smoothening transition.
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Yasuhiro Akutsu, Yasuhiro Hieida, Kouichi Okunishi, Noriko Akutsu, Tak ...
Article type: Article
1999Volume 26Issue 2 Pages
54-
Published: July 01, 1999
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Mechanism of the step smoothening transition is discussed based on the equivalence between the vicinal surface and the magnetization process of one-dimensional Quantum antiferromagnets.
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Takao Yamamoto, Yasuhiro Akutsu, Noriko Akutsu
Article type: Article
1999Volume 26Issue 2 Pages
55-
Published: July 01, 1999
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We introduce the Ginzburg-Landau-Langevin (GLL) equation with the thermal noise different from the conventional white noise, which is called the modified thermal-noise Ginzburg-Landau-Langevin (MTN-GLL) equation. By the "new" GLL equation, we analyze the fluctuation properties of an isolated step on growing surface and derive the "distribution function" of the step. 0n the basis of the distribution function, we derive the MTN-GLL equation for many-step system. We compare the analytical result form the equation with a Monte-Carlo calculation.
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Yukio SAITO, Takuya SHOYA
Article type: Article
1999Volume 26Issue 2 Pages
56-
Published: July 01, 1999
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The elastic deformation of the substrate induces a repulsive interaction between adsorbed atoms. In a model of one- dimensional adsorbate with submonolayer coverage, the devil's staircase as well as clustering is obtained by varying the strength of the short-range chemical bonding and the coverage.
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N Matsumoto, M Kitamura
Article type: Article
1999Volume 26Issue 2 Pages
57-
Published: July 01, 1999
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Distribution coefficients between liquid and binary ideal solid solution during growth from dilute solution at steady state conditions are investigated in acount with kink kinetics.
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Yasuhiro Hieida
Article type: Article
1999Volume 26Issue 2 Pages
58-
Published: July 01, 1999
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The asymmetric exclusion process (ASEP) model, by which crystal growth phenomena are described. Is studied using the numerical renormalization method (the density matrix renormalization group (DMRG) method). We will present, for example, the density profile and the decay time of the model in which we include the evaporation-deposition process together with the hopping process.
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Makio Uwaha, Katsuhiro Watanabe, Ayahiko Ichimiya, Kazuhiko Hayashi
Article type: Article
1999Volume 26Issue 2 Pages
59-
Published: July 01, 1999
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We study the Decay of a cone-shaped island on a facet with the use of a simple model consisting of circular steps with elastic repulsion. Short steps near the center shrink layer by layer and an enlarging facet appear at the top. At some stage outer steps form a bunch due to the repulsion and shrink together.
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Etsuro Yokoyama
Article type: Article
1999Volume 26Issue 2 Pages
60-
Published: July 01, 1999
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A model is formaulated to explain the appearance of pattern with periodical structures during growth of crystals under constant external conditions, such as temperature, concentration and convection. The model takes into account a hysteresis behavior of surface kinetic processes at a rate determined by the excess concentration of the surface from the local equilibrium. Self-oscillatory growth occurs because of the coupling of surface kinetics to the transport of molecules under constant growth conditions.
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Michihiro Kuraoka, Tadashi Ohachi
Article type: Article
1999Volume 26Issue 2 Pages
61-
Published: July 01, 1999
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Induction time of electrical nucleation was compared with theoretical one. The electrical nucleation, which occurs near the silver electrode in supercooled concentrated sodium acetate trihydrate solution, is explained by Kashchiev's theory instead of Isard's theory.
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Tadashi OHACHI, Kazumi YOSHIDA, Yoshiaki HORI, Takehiro NISHI
Article type: Article
1999Volume 26Issue 2 Pages
62-
Published: July 01, 1999
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Equilibrium crystal shape (ECS) of the high temperature chase of fcc Ag_2S was studied by a scanning electron microscope. Orientation relationship between small crystals and the matrix of Ag is important lo determine the obtained ECS. Octahedron, platelet sphere ECSs were observed.
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Masahiro kamiyo, Noriyuki Yoshimoto, Kazunori Suzuki, Masahito Yoshiza ...
Article type: Article
1999Volume 26Issue 2 Pages
63-
Published: July 01, 1999
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Self-assembled monolayers of dibutylamino-triazine-ditiol were formed on Au (111) by wet and dry processes. The structure of monolayers was investigated using STM, AFM and XPS STM images revealed that Dibutylamino-triazine-ditiol (DB) molecules spontaneously aggregate on gold surface. XPS showed that the binding energy between DB and gold changed with changing substrate temperature in dry process.
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Etsuro Yokoyama, Robert F. Sekerka, Yoshinori Furukawa
Article type: Article
1999Volume 26Issue 2 Pages
64-
Published: July 01, 1999
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I. Sunagawa, T Yasuda, B Fukushima
Article type: Article
1999Volume 26Issue 2 Pages
65-
Published: July 01, 1999
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By means of X-ray topography and cathodeluminescence tomography, three brilliant cut diamonds were investigated. It was demonstrated that the growth of Major part of two brilliants cut from the same rough took place on a seed diamond cuboid formed eleswhere and transported to the growth site. From the Morphological characteristics of the seed, it was argued that the seed was formed in high pressure metamorphic rocks in the subduction zone, and transported into an ultraiafic magma in the Mantle.
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Naohisa OGAWA
Article type: Article
1999Volume 26Issue 2 Pages
66-
Published: July 01, 1999
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The Icicles have the thickness-waves along themselves with proper wave length. We show such waves can be introduced by the resonance between the fluctuation of solid surface and the ones of surface of water now on the icicle.
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T Mori, D.K. Aswal, T Koyama, Y Hayakawa, M Kumagawa
Article type: Article
1999Volume 26Issue 2 Pages
67-
Published: July 01, 1999
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The pseudo-binary Y/NdBa_2Cu_3O_x-Ba_3Cu_<10>O_<13> phase diagrams and the crystallization of Y/NdBa_2Cu_3O_x have been in situ observed using high-temperature optical microscope in air. Dendritic growth occurred at the cooling rate of 5℃/min, but plate-like crystals grew by holding the temperature at 993℃. Y-rich and Nd-rich crystals were grown at the higher and lower temperature regions in the horizontal furnace, respectively.
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Y Hayakawa, D.K. Aswal, M Shinmura, T Koyama, M Kumagawa
Article type: Article
1999Volume 26Issue 2 Pages
68-
Published: July 01, 1999
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The pseudo-binary NdBa_2Cu_3O_x-Ba_3Cu_<10>O_<13> phase diagrams and the crystallization of NdBa_2Cu_3O_x have been in situ observed using high-temperature optical microscope under three different oxygen atmospheres namely 1%, 0.1% and 0.0097% oxygen mixed in argon gas. The liquidus line becomes narrower both in composition and temperature with decreasing oxygen pressure. The crystallization temperature of NdBa_2Cu_3O_x was found to decrease logarithmically with decreasing oxygen content in the atmosphere.
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Y Hayakawa, D.K. Aswal, M Shinmura, T Koyama, M Kumagawa
Article type: Article
1999Volume 26Issue 2 Pages
69-
Published: July 01, 1999
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The growth rate of Yba_2Cu_3O_x single crystal along [100]/[010] directions has been measured in situ using high-temperature optical microscope. The results showed that the growth rate of Yba_2Cu_3O_x crystals is intimately related with the dissolution of Y_2BaCuO_5 particles in the liquid.
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Masashi Hasegawa, Fumihiko Takei
Article type: Article
1999Volume 26Issue 2 Pages
70-
Published: July 01, 1999
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High quality single crystals of Tl-based cuprate superconductors arc of profound importance to clarifying intrinsic physical properties of the high-T_c cuprates. We have succeeded to grow single crystals of the Tl-2201 superconductor with extremely high quality using a self-flux method. The maximum value of resistivity ratio R (RT)/R(T_c) of the as-grown crystals is 18.3. It is found that a closed atmosphere method using a gold crucible is useful to grow the high quality single crystals.
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A Yoshikawa, K.H Hasegawa, S.D. Durbin, B.M. Epelbaun, T Fukuda, Y Wak ...
Article type: Article
1999Volume 26Issue 2 Pages
71-
Published: July 01, 1999
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From aerospace application and gas generator application, strength material which can be used more than 1500℃ is required. Now, sapphire/YAG eutectic composites are regarded as candidate. In this study, the fiber growth of the composite using micro pulling down (μ-PD) method were carried out and the preferred growth orientation was discussed.
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T Shonai, M Higuchi, K Kodaira
Article type: Article
1999Volume 26Issue 2 Pages
72-
Published: July 01, 1999
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Nd: YVO_4 single crystals with high Nd-contents were successfully grown by the floating zone method. The growth conditions for growing macroscopic-defect free crystals were investigated with respect to Nd-content and growth rates. No cellular growth was observed in the crystal with 8.5 at% Nd even at a growth rate of 25 mm/h.
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T Sekijima, T Fujii, K Wakino, M. Okada
Article type: Article
1999Volume 26Issue 2 Pages
73-
Published: July 01, 1999
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We have been successfully grown the fibrous tetragonal-BaTiO_3 crystals using Traveling Solvent Floating Zone (TSFZ) method. In this growth, the TiO_2-rich self-flux was chosen to the solvent. The obtained crystal is about 0.8mm in diameter and 30mm in length, and shows the ferroelectric hysteresis at room temperature without after heat treatment.
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Xiaopeng Jia, Akimitsu Miyazaki, Hideo Kimura
Article type: Article
1999Volume 26Issue 2 Pages
74-
Published: July 01, 1999
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A containerless processing for crystallization from supercooled melt was carried out by floating zone method on the ground condition. Ba (B_<0.9>Al_<0.1>)_2O_4 was used as a sample. The crystallization was started from the center of floating molten zone.
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A MIYAZAKI, H KIMURA, X JIA
Article type: Article
1999Volume 26Issue 2 Pages
75-
Published: July 01, 1999
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Crystallization of Ba (B_<0.9>Al_<0.1>)_2O_4 from supercooled pendant drop were investigated on a viewpoint of a phase formation. Ba (B_<0.9>Al_<0.1>)_2O_4 has a low temperature phase and a high temperature phase in a solid. The phase formation was expected to depend on the crystallization temperature.
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H Motojima, T Ozawa, T Mizota, O Shimomura
Article type: Article
1999Volume 26Issue 2 Pages
76-
Published: July 01, 1999
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We investigated basic characteristics of growth of Ba (B_<1-X>Al_x)_2O_4 single crystals using NaCl and Na_2O as the solvent. And then faceted Ba (B_<1-X>Al_x)_2O_4 single crystals were grown by SSSG method based on the data.
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A Nagahori, H Sekiwa, H Tominaga, Y Ebina
Article type: Article
1999Volume 26Issue 2 Pages
77-
Published: July 01, 1999
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Large crystals of GdYCOB (Gd_XY_<1-X>Ca_4O(BO_3)_3)(0.20<x<0.35), have been grown by the Czochralski method. Crystal growth condition was optimized. Typical size of crystals is 40mm in diameter and 50mm in length. Suitable rate of crystal rotation made the interface of crystal growth flat and reduced optically inhomogeneous core.
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M Sone, T Inoue
Article type: Article
1999Volume 26Issue 2 Pages
78-
Published: July 01, 1999
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The effects of impurity (sodium acetate, 1mol.%) upon the habit changes of NaBrO_3 crystals grown from aqueous solution have been investigated. The results were compared with those in the acetic add doping.
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K Fujioka, M Nakatsuka
Article type: Article
1999Volume 26Issue 2 Pages
79-
Published: July 01, 1999
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Improvement of the optical quality of the crystal requires that the growth rate is controlled constant. The dependence of the growth rate upon the temperature and supersaturation of the solution was studied under higher level of supersaturation. The results were added to the data base for computer-controlled growth system consisted with the relationship between the concentration, temperature and electric conductivity.
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T Kaneko, N Miyakawa, M Asano
Article type: Article
1999Volume 26Issue 2 Pages
80-
Published: July 01, 1999
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La-doped Bi2201 single crystals were grown by the floating zone method, where the growth rate was adjusted as 0.3mm/h and 0.5mm/h. EPMA analysis was performed on the as-grown crystals to investigate La distribution along the growth direction. As results. There were no La-segregation in the single crystal which was grown with 0.3mm/h.
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H Furuya, H Nakao, I. Yamada, K Murase, M Yoshimura, Y Mori, T Sasaki
Article type: Article
1999Volume 26Issue 2 Pages
81-
Published: July 01, 1999
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We have developed Gd_<0.28>Y_<0.72>Ca_4O(BO_3)_3(Gd_xY_<1-X>OB) crystal in order to control optical birefringence. And this crystal is possible to generate (θ,φ)=(90°,90°) phase matched third harmonic of 1064nm light. Furthermore we have grown and characterized La_xGd_<1-X>COB crystal for noncrytical phase-matching of 800nm band IR lasers.
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A. Durand, K. Lebbou, V. I. Chani, A. Yoshikawa, T. Fukuda
Article type: Article
1999Volume 26Issue 2 Pages
82-
Published: July 01, 1999
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Y Anzai, T Yamazaki, K Yamagishi
Article type: Article
1999Volume 26Issue 2 Pages
83-
Published: July 01, 1999
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Forsterite (Mg_2SiO_4) single crystals containing 0-0.1wt% Cr were grown by the Czochralski method. Defect structures were investigated by X-ray topography. Dislocation density was high at center region.
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M Higuchi, K Kodaira, S Nakayama
Article type: Article
1999Volume 26Issue 2 Pages
84-
Published: July 01, 1999
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Apatite-type neodymium silicate single crystals with various compositions were grown by the floating zone method and their oxide ionic conductivity was measured. Based on macroscopic defects and conductivities of the crystals. The congruent composition was estimated to be around Nd_<9.20>(SiO_4)_6O_<1.8>, which is different from the stoichiometric one.
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K Kodaira, M Higuchi, K Abe, S Maida, T Kitagawa, T Togi, T Ueda
Article type: Article
1999Volume 26Issue 2 Pages
85-
Published: July 01, 1999
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A new melt growth technic which we call a pulling-down method has been established by the authors. The feature of this method is to grow long size crystals having the same diameter with a crucible by continuously supplying powder. Single crystals can be easily grown by solidifying the melt flowing out of a hole at a bottom of the crucible. Crack and core free single crystals were obtained for Li_2B_4O_7. LiNbO_3Bi_<12>SiO_<20> and TiO_2.
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H. Habuka, T. Otsuka, W.F. Qu, M. Shimada, K. Okuyama
Article type: Article
1999Volume 26Issue 2 Pages
86-
Published: July 01, 1999
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The numerical calculation model for boron incorporation in silicon epitaxial film is discussed, for the first time, accounting for the transport phenomena of B_2H_6, SiHCI_3,HCl and H_2 gases in addition to those of heat and flow in the horizontal cold-wall single-wafer epitaxial reactor.
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Makoto Itoh
Article type: Article
1999Volume 26Issue 2 Pages
87-
Published: July 01, 1999
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We will report our discovery of the structural transition of the islands which appear in the very early stages of GaAs (001) homoepitaxy.
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K Asai, J.M. Feng, P.O. Vaccaro, K Fujita, T Ohachi
Article type: Article
1999Volume 26Issue 2 Pages
88-
Published: July 01, 1999
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Ga desorption was changed by Arsenic vapor pressure with constant incoming Ga flux. Peak energy was transferred to high energy as As pressure was risen at 520℃. At low substrate temperature. Ga sticking coefficient was reduced under Arsenic-rich condition. Ga desorption was also reduced with high index at 520℃.
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K Kohno, K Nakai, M Tateuchi, J.M. Feng, P.O. Vaccaro, K Fujita, T Oha ...
Article type: Article
1999Volume 26Issue 2 Pages
89-
Published: July 01, 1999
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Characteristic of the lateral wet oxidation of AlAs layer was changed by the MBE growth condition of AlAs layer. Diffusion controlled oxidation process changes to interface reaction contorolled one when the As/Al flux ratio becomes more than 8.5.
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Z. Yan, S Naritsuka, T Nishinaga
Article type: Article
1999Volume 26Issue 2 Pages
90-
Published: July 01, 1999
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The process of the lateral coalescence in the MCE of InP by LPE was studied. We suggest two modes of the lateral coalescence: the "one-zipper" and the "two-zipper" growth. Dislocations are usually found in the coalescent region when the growth is in the "two-zipper" mode, however, when the growth changes to the "one-zipper" mode, even the coalescent region becomes dislocation-free.
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Z. Yan, S Naritsuka, T Nishinaga
Article type: Article
1999Volume 26Issue 2 Pages
91-
Published: July 01, 1999
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We have carried out a theoretical approach for the understanding of the processes involving in the microchannel epitaxy (MCE). By numerically solving a two-dimensional equation for diffusion, concentration profile as a function of growth time in the growing solution can be determined. Based on this profile. A simulation of the MCE has been conducted. The W/T ratio derived from the simulation has a similar dependence with those obtained from the experiment.
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S Naritsuka, Z. Yan, T Nishinaga
Article type: Article
1999Volume 26Issue 2 Pages
92-
Published: July 01, 1999
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In InP Microchannel Epitaxy (MCE) by liquid chase epitaxy (LPE), Sn:In=3:l (in weight) solution is used to achieve n-type doping. As the solubility of P in Sn is very high, the growth condition should be optimized by changing the size of the upper crystal. As the result, a wide dislocation-free n-type InP MCE layer, whose width was as large as 210 μn, was obtained on a Si substrate. The optical property of a MQW structure grown on the MCE layer was also excellent.
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S Iida, Y Hayakawa, T Koyama, M Kumagawa
Article type: Article
1999Volume 26Issue 2 Pages
93-
Published: July 01, 1999
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In order to investigate the formation mechanism of the bridge, InGaAs layer were grown on line-seed substrate alined with <110>. When InGaAs grew laterally with {111} B plane appeared at growth front, InGaAs formed a bridge. This results indicated that Berg effect greatly affected on the formation mechanism of the bridge.
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Y Nabetani, M Kanemaru, T Egawa, T Kato, T Matsumoto
Article type: Article
1999Volume 26Issue 2 Pages
94-
Published: July 01, 1999
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The step structures formed on ZnSe surface growing on GaAs vicinal substrates were investigated by in-situ reflection high energy electron diffraction (RHEED) observation. The superposition of two kinds of rods originating from terrace and atomic array were dearly observed. The RHEED patterns revealed the uniformity of step structure.
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Yoshihiro KANGAWA, Noriyuki KUWANO, Kensuke OKI
Article type: Article
1999Volume 26Issue 2 Pages
95-
Published: July 01, 1999
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We studied the formation mechanism of a CuAu-I type ordered structure m an InGaAs grown on a vicinal (110) InP substrate with. Two-monolayer steps on the growth surface. The results of empirical interatomic potential calculations have shown that In and Ga adatoms tend to occupy the upper and the lower sites, respectively, at a kink of two-monolayer steps on the growth surface to form alternate-stacking of Ga- and In-rich (110) planes; that is, a CuAu-I type ordered structure.
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