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原稿種別: 表紙
1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
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1999 年 26 巻 2 号 p.
v-vii
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1999 年 26 巻 2 号 p.
viii-xxiii
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渡辺 匡人
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1999 年 26 巻 2 号 p.
1-2
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We developed direct observation method for molten silicon now during Czochralski (CZ) crystal growth using x-ray radiography and solid tracer method. Using this method, now velocity and structure of molten silicon now in the normal CZ and the magnetic field applied CZ (MCZ) has been clarified.
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黄 新明, 太子 敏則, 干川 圭吾
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1999 年 26 巻 2 号 p.
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An in situ observation was carried out for investigating the interfacial phase formed at the B-doped Si melt/silica glass interface. It is found that the growth rate of the interfacial phase almost does not change when the boron concentration in the silicon melt is lower than 1x10^<19> atoms/cm^3, but it decreases considerably with increasing the boron concentration.
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岸 弘史, 黄 新明, 大石 修治, 干川 圭吾
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1999 年 26 巻 2 号 p.
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Behavior of bubbles in silica glass for growing silicon crystals as crucibles at 1500℃ was observed in site. A large number of bubbles scarcely moved in the silica glass. The bubbies were expanded with the holding time. A small number of bubbies disappeared on heating.
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太子 敏則, 深海 龍夫, 黄 新明, 干川 圭吾
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1999 年 26 巻 2 号 p.
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Heavily boron-doped silicon single crystal growth was studied by Czochralski method. The distribution coefficient of boron decreased with increasing the doped boron concentration of more than 10^<20> atoms/cm^3. Single crystal growth was limited by the cellular growth of constitutional supercooling.
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寺嶋 一高, 西村 鈴香, 加藤 正樹
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1999 年 26 巻 2 号 p.
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This paper describes the melt convection variation with adding boron into silicon melts with and without transverse magnetic fields. The variation of silicon melt convection and point defect origin win be discussed in terms of melt property measurements and evaluation of Cz crystals.
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北村 健二, 古川 保典, 竹川 俊二, 長 康雄, 畑中 孝明, 伊藤 弘昌
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1999 年 26 巻 2 号 p.
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We report newly developed stoichiometric LiNbO_3 and LiTaO_3 crystals as promising materials for bulk quasi-phasematching using periodical poling because of its low coercive field for ferroelectric domain switching and reduced photorefraction as compared to congruent crystals. In this paper, we describe some differences in ferrelectirc domeain morphology between sloichiometric and congruent materials. Especially, in LiTaO_3, domain size was very large in stoichiometirc one that in congruent one. Lt turned out that the morphology is closely related with the contrability of periodical poling.
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Myeongkyu Lee, Yasunori Furukawa, Shunji Takekawa, Kenji Kitamura, Hid ...
原稿種別: Article
1999 年 26 巻 2 号 p.
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古川 保典, 北村 健二, 竹川 俊二, Myeongkyu Lee
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1999 年 26 巻 2 号 p.
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We report green-induced infrared absorption in undoped and MgO doped LiNbO_3, crystals of different stoichiometries and degrees of reduction. Undoped near-stoichiometric LiNbO_3 crystals show higher photorefraction and green-induced infrared absorption than conventional congruent crystal; however, nearly stoichiometric LiNbO_3, crystals doped with MgO of more than 1mol.% exhibit no measurable increase of photorefraction and infrared absorption with an irradiation of 1W of green light. This can beexplained by the elimination of intrinsic defects of Nb^<5+> at Li site by Mg^<2+> substitution.
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島村 清史, Namujilatu, 中野 憲司, 福田 承生
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1999 年 26 巻 2 号 p.
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We have successfully grown Ce-doped LiCaAIF_6 and LiSrAIF_6 single crystals by the Czochralski method. Grown crystals were free of cracks and inclusions. Effective segregation coefficients of Ce in LiCaAIF_6 and LiSrAlF, single crystals were 0.021 and 0.013, respectively. Ce: LiCaAIF_6 venerated as high as 60 mJ at 10Hz at 289nm, which is the highest performance ever reported.
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山田 容士, 三浦 忠将, 小池 良洋, 生田 博, 水谷 宇一郎, 平林 泉
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1999 年 26 巻 2 号 p.
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Surface morphology on the a-b plan have been observed for Yba_2Cu_3O_<7-X> crystal grown from high temperature solution of Ba-Cu-O. Carbon and fluorine addition make originally straight steps more corrugated. Corrugation of steps is considered to be due to the change of bonding energy of atoms consisting of the solution as the additives are incorporated in the solvent.
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寺嶋 一高
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1999 年 26 巻 2 号 p.
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The relation between growth of Si crystals and fundamental properties of Si melts will be discussed. Especially, a continuous study on the atomic behavior at the growing front will be necessary.
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野城 清, 松本 大平, 藤井 英俊
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1999 年 26 巻 2 号 p.
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Surface tension and density of liquid Si were measured by the levitated drop method under micro-gravity environment. The surface tension of liquid Si was obtained from undercooled region to 1600℃ and in good agreement with previous results. The density value in the present work was lower than the previous reults.
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佐藤 譲
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1999 年 26 巻 2 号 p.
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Viscosity of molten silicon has been measured by using an oscillating viscometer in the temperature range up to 18 80K including supercooled temperatures. Cylindrical crucible made of different materials were used to study the effect of the materials. Viscosities obtained show good linearity in Arrhenius type plot even in the suoercooled temperatures, and no abnormal temperature dependence was found. The absolute value at the melting point is about 0.58mPa s.
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永田 和宏
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1999 年 26 巻 2 号 p.
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The thermal conductivity of silicon in solid and liquid states over the temperature range between 293 and l724 K has been measured by means of a non-stationary hot wire method. The hot wire was coated by silica-based ceramics film in order to avoid leak electric current. The spectral emissivity of silicon in solid and liquid states in the wave length between 650 and 2400μm at its melting point has been measured using a cold crucible furnace in order to avoid contamination on silicon surface by crucible materials.
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松井 恒雄
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1999 年 26 巻 2 号 p.
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The vapor pressures of Site) and Si_2(g) over Si (l) were measured with a time-of-flight mass-spectrometer equipped with a boron-nitride Knudsen cell. The third law values of vaporization of Si (g) and Si_2(g) were in agreement with the second law ones.
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小野 直樹, 北村 浩之介, 中嶋 健
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1999 年 26 巻 2 号 p.
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Young's modulus of silicon single crystal was measured in the range from room temperature to 1000℃. The modulus was calculated from the resonance frequencies in the flexural mode of vibration. Young's modulus in high temperature did not decrease so much as expected. The dependency of Boron concentration was also investigated and found to be very small in this temperature range.
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安廣 祥一, 今石 宣之, 韓 丞皓, 塚田 隆夫, 宝沢 光紀, 圓山 重直, 河村 洋, 鈴木 健二郎, 北川 貞雄
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1999 年 26 巻 2 号 p.
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A large scale numerical code was developed for a global analysis of silicon Cz furnace to understand transport phenomena in details. The code is composed of four major element codes each of which analyzes transport phenomena in the gas, melt and solid phases and the radiative heat transfer between partly specular surfaces. Each code has been developed by the research project members. Separately. A main program was developed to manage the exchanges of velocity, temperature and concentration values and fluxes at each phase boundaries and also to process the trials for convergence.
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纐纈 明伯, 熊谷 義直, 関 壽
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1999 年 26 巻 2 号 p.
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The thermodynamic analysis of GaN and InGaN growth using tri-halide sources is investigated. Lt is found that in F=0.0(inert carrier gas), the driving force of GaN using GaCl_3 source is equal to that using GaCl source. The driving force using GaCl_3 decreases with increasing the hydrogen pressure in carrier gas. The solid composition of InGaN is also disscussed in corrmarison with the exoerimental data. Lt is shown that the solid composition using GaCl_3 and InCl_3, sources is thermodynamically controlled.
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纐纈 明伯, 熊谷 義直, 関 壽
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1999 年 26 巻 2 号 p.
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The thermodynamic analysis of MOVPE growth using N_2H_4 is investigated, compared with NH_3 which is current being used as a group v source. Lt is shown that the formation of indium containing nitrides proceeds markedly in the N_2H_4 source system without the deposition of In droplets. Ln the In_xGa_<1-X>N growth, the deviation of solid compositions from a linear function of the input mole ratio of the group III is suppressed significantly in the N_2H_4 system.
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松尾 有里子, 仁村 幹彦, 纐纈 明伯
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1999 年 26 巻 2 号 p.
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The hydrogen chemisorption on the surface is monitored by the surface photoabsorption method with a halogen transport ALE growth system. The AH, enthalpy change according to the hydrogen chemisorption, obtained by the in situ monitoring is +81.7 kJ/mol. The total energy change calculated by ab initio method is closed to the experimental results. The purpose of the present work is to monitor the hydrogen chemisorption on the (111)A Ga surface under an atmospheric pressure and to determine the atomic configuration on the surface by ab initio calculation.
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真弓 美帆, 西森 洋介, 纐纈 明伯, 関 寿
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1999 年 26 巻 2 号 p.
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In situ gravimetric monitoring of atomic layer epitaxy (ALE) of a cubic-GaN on GaAs (001) is investigated by a halogen transport system using GaCl and NH3 sources. The cubic-GaN growth of one monolayer / cycle is obtained at the temperature range from 350 to 400℃. The growth rate decreases with increasing temperature, and then the growth rate in one ALE cycle keeps a constant at about 0.45 from 410 to 450℃. Also, it is shown that a pure cubic-GaN can be grown by a halogen transport ALE.
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久保 秀一, 岡崎 智一, 真鍋 茂樹, 倉井 聡, 山田 陽一, 田口 常正
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1999 年 26 巻 2 号 p.
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We have performed the growth of homoepitaxial GaN to overcome the problems concerning with hetero interface, which prevents growing high quality GaN film by MBE. A mirror-like surface and an emission of radiative recombination of free excitons were observed in homoepitaxial GaN by optical microscope and photoluminescence measurement, respectively. These results indicated that high quality GaN film could be grown by MBE using homoepitaxial growth technique.
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西尾 光弘, 林田 和樹, 上徳 理, 郭 其新, 小川 博司
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1999 年 26 巻 2 号 p.
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ZnTe growth has been investigated, using (100) oriented ZnTe substrates, by synchrotron radiation (SR)-excited epitaxy. The epitaxial growth is attainable even at room temperature. The growth characteristics have been investigated as functions of substrate temperature and source transport rate. The photoluminescence from the mms deposited by SR-excited growth has been observed.
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碓井 彰, 酒井 朗, 砂川 晴夫, 黒田 尚孝, 水田 正志
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1999 年 26 巻 2 号 p.
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GaN layers with low dislocation density were grown by facet-initiated epitaxial lateral overgrowth (FIELO) method. The important reduction mechanism m the FIELO was found to be the bending effect of dislocations caused by the facet formation m the beginning of the growth. Crack-free GaN layers with the thickness of 500 μm were successfully grown on 2-inch-diameter sapphire substrates by using this method.
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吉村 和正, 山田 陽一, 田口 常正
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1999 年 26 巻 2 号 p.
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Mg_XZn_<1-X>S mixed mms with the zincblende structure have been grown by low-pressure metal organic chemical vapor deposition system using bis (cyclopentadienyl) magnesium as a Mg source. With increasing Mg composition up to about 0.4, the main Uv emission band moves towards higher energy side in addition to an increase in its linewidth.
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中村 成志, 安藤 剛, 田中 重行, 山田 陽一, 田口 常正
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1999 年 26 巻 2 号 p.
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High-quality ZnS homoepitaxial films have been grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on ZnS hulk substrates prepared by an iodine-transport method. Photoluminescence spectra of the ZnS homoepitaxial films at 4.2 K were dominated by the radiative recombination of excitonic transitions. In addition,the homoepitaxial growth of ZnS by molecular beam epitaxy (MBE) was performed on MOCVD-grown ZnS thick films. It was found that the contamination of residual impurity was much reduced in the ZnS homoepitaxial films grown by MBE.
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西村 鈴香, 寺嶋 一高
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1999 年 26 巻 2 号 p.
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The growth of BP on Si substrates has been carried out. We have successfully grown BP epitaxial layer on Si (100) substrates with 10×10mm^2 area with adding thin low temperature growth layer. The growth of BP on Si will be discussed.
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城 貞晴, 後藤 芳彦
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1999 年 26 巻 2 号 p.
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The growth modes of Ba deposited on Mo (110) surface have been studied by means of RHEED. At the deposition thickness more than 2ML, the crystallites with triangular lattice appeared on the ([numerical formula]) structure. The growth of Ba occurs by the Frank-van der Merwe mode at room temperature and by the Stranski-Krastanov mode at temperatures higher than 300℃.
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加藤 晃, 後藤 芳彦
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1999 年 26 巻 2 号 p.
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Transmisson electron microscopic observation of W thin crystal with (100) plane deposited with Ag was earned out. The diffraction pattern of the specimen deposited at each temperature on the surface shows that Ag grows cpitaxially on W (100) surface. In the specimen deposited with Ag at room temperature, islands with fiber structures of |111| axis are observed. At the temperatures from 100℃〜200℃ epitaxial islands with (111) laver and at 300℃〜500℃ epitaxial islands with (100) layer are observed.
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斎藤 嘉夫, 木村 誠二, 墻内 千尋, 吉本 則之, 小池 千代枝
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1999 年 26 巻 2 号 p.
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Soot in carbon smoke has been studied by electron microscopy. Amorphous carbon and many C_<60> crystal grains were found in the soot. The fullerene content in the soot was more than 90%, which was produced under applied voltage of -12 in volt. The higher content of C_<60> attributes to produce small carbon clusters by ionization or charging. The formation model of C_<60> molecules is proposed. Which is called "saltation transition model".
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小嶋 雄樹, 阿藤 陽一, 上野 洋, 古賀 健二朗, 小林 崇仁, 木村 誠二, 齋藤 嘉夫, 墻内 千尋
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1999 年 26 巻 2 号 p.
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The singular morphology wa8 found in smoke by the simultaneous evaporation of SiO and metals. The growth has been discussed on basis of VLS like mechanism. In the system of Cr-SiO and Fe-SiO, a single whisker of Si crystal covered with amorphous SiO_2 layer has been found. In Al-Sio system, a crystal γ-Al_2O_3 whisker has been found.
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鈴木 仁志, 木村 誠二, 齋藤 嘉夫, 中田 俊隆, 墻内 千尋
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1999 年 26 巻 2 号 p.
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Ultrafine particle of indium trioxide have been produced by evaporating indium granule from a nichrome boat in the electric fiield. Two electric plates (4cm×4cm, 1.5cm apart) were placed just above the evaporation source. Shape of smoke changed drastically by the applied voltage between 0〜300V. It was found that the particle size can be controlled by the applied voltage.
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木村 勇気, 木村 誠二, 中田 俊隆, 齋藤 嘉夫, 墻内 千尋
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1999 年 26 巻 2 号 p.
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It has been found that KBr-KCl binary alkali halide crystals can be produced at room temperature by successive evaporation of KCl and/or KBr on KBr and/or KCl particles in spite of large particles (200nm). The results on KCl-NaCl, NaCl-NaBr and KBr-NaCl have been shown.
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左右木 公嗣, 湯本 久美, 明石 和夫, 関 務
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1999 年 26 巻 2 号 p.
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Nb films for hydrogen separation permeable membrane were prepared by arc-ion plating. The columnar Nb crystals grew on a flat Al_2O_3 substrate. The corn-shaped Nb crystals grew on a flat Al_2O_3 substrate. The difference of these morphologies were explained by the theory of geometric selection. The corn-shaped crystals inhibited the formation of Pin holes in the Nb films.
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村瀬 嘉夫, 伊賀 武雄, 遠山 和雄, 加藤 悦朗
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1999 年 26 巻 2 号 p.
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Whisker particles of zirconia and AlNH_4CO_3(OH)_2 were prepared under hydrotheral conditions at 200℃. The former was obtained through the growth of zirconia seed particles of about 10nm in particle size and the latter through Ostwald's growth of the fine particles of the same size.
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岸 清
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1999 年 26 巻 2 号 p.
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On the basis of that the surface of CVD Cu microcrystals reduced with H_2 are epitaxially covered with thin {111} CuX mm, a complex diffusion field model is applied to the morphological change of Cu microcrystals due to the species of reducing atmosphere.
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湯本 久美, 佐古 卓司, 後藤 芳彦, 金子 聰
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1999 年 26 巻 2 号 p.
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ITO whiskers were grown by VLS mechanism along a glass substrate at t<30s, The whiskers grew perpendicular to the substrate at t>30s. They have a Sn-rich droplet on the tip. As the whiskers incorporated Sn on the substrate at t>30s, they grew along the substrate. When the Sn on the substrate was decreased with deposition time, the whiskers incorporated molecules directly from the vapor phase and grew perpendicularly.
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宮下 哲, 西村 良浩, 関口 隆史, 小原 和夫, 佐崎 元, 宍戸 統悦, 中嶋 一雄, 坂上 登
原稿種別: 本文
1999 年 26 巻 2 号 p.
40-
発行日: 1999/07/01
公開日: 2017/05/31
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Optical property of hydrothermally grown ZnO single crystals was measured by the cathode luminescence method. The obtained spectra from as-growth surfaces differed depending on the type and amount of the defects. The growth sector of the m-surface had the best optical property.
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竹田 篤, 木村 誠二, 墻内 千尋
原稿種別: 本文
1999 年 26 巻 2 号 p.
41-
発行日: 1999/07/01
公開日: 2017/05/31
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We developed Immunosuppressive Silica nm ultrathin fill coating methods on the surface of organic pigments for improving living body adaptability by super moderate hydrolysis of tetraethoxysilane without catalyst. We also improved color brightness, dispersibility and photo-reactivity by uniform nm silica film, so dosage of pigments will be substantially reduced.
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竹田 篤, 木村 誠二, 墻内 千尋
原稿種別: 本文
1999 年 26 巻 2 号 p.
42-
発行日: 1999/07/01
公開日: 2017/05/31
ジャーナル
フリー
We developed SiO_2 nm ultra thin film coating methods on the surface of innorganic pigments for preventing the skin damages by metallic ions with moderate hydrolysis of tetraethoxysilane without catalyst. We improved metallic ion's protectivity, color brightness, dispersibility, dosage, anti-oxidation ability, photochemical interaction and mechanical property.
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北村 雅夫, 西岡 一水
原稿種別: 本文
1999 年 26 巻 2 号 p.
43-
発行日: 1999/07/01
公開日: 2017/05/31
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The incorporation rates of growth units into kink sites on growth surfaces of crystals by series processes via intermediate sites from solution are investigated by changing the energy states of the intermediate sites and the activation energies for the processes. The result suggests the existence of a rapid-incorporation path in surface kinetics of crystal growth.
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佐藤 正英, 上羽 牧夫
原稿種別: 本文
1999 年 26 巻 2 号 p.
44-
発行日: 1999/07/01
公開日: 2017/05/31
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We study step bunching induced by the Schwoebel effect in growth. When the attachment of adatoms is easier from the upper terrace, a growing train of straight steps is unstable to the bunching instability. In large terraces single steps are always present and repeat collision with large bunches. When the evaporation of adatoms is neglected, the terrace size grows as t^β with βap1/2 by coalescence of the bunches.
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