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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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原稿種別: 付録等
2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
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2006 年 33 巻 4 号 p.
iv-vi
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2006 年 33 巻 4 号 p.
vii-xvi
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原稿種別: 文献目録等
2006 年 33 巻 4 号 p.
Misc1-
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佐藤 史和, 田邉 匡生, 小山 裕, 木村 智之, 須藤 建, 西澤 潤一
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2006 年 33 巻 4 号 p.
177-
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GaSe bulk crystal was grown by liquid phase temperature difference method. The crystalline structure and its optical properties were investigated by XRD and near-infrared spectroscopy, respectively. It is shown that the present grown GaSe has ε-polytype with polycrystalline phase.
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疋田 卓也, 村上 倫章, 小山 忠信, 百瀬 与志美, 熊川 征司, 早川 泰弘
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2006 年 33 巻 4 号 p.
178-
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The homogeneous InGaSb ternary alloy crystals were grown by the temperature gradient method. During the InGaSb crystal growth, heat pulses were introduced and the growth rate was measured using impurity striations. The temperature gradient in the solution was estimated from the indium compositional profile of the growth crystal. The appropriate cooling rate was calculated from the growth rate and temperature gradient. The homogeneous InGaSb crystal with aimed composition was grown by the appropriate cooling rate.
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干川 岳志, 太子 敏則, 黄 新明, 宇田 聡
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2006 年 33 巻 4 号 p.
179-
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The effective segregation coefficient of Ge, Ga and B in plurally doped CZ-Si growth has been investigated. It was found that effective segregation coefficient of Ge and B was about 0.52 and 0.70 respectively in heavily B and Ge codoped Si crystal with an average growth rate of 1mm/min.
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劉 立軍, 米田 大悟, 高橋 奈菜子, 中野 智, 陳 雪江, 柿本 浩一
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2006 年 33 巻 4 号 p.
180-
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A partial three-dimensional (3D) global model [1] was improved and applied to modeling the mixed heat transfer in a unidirectional solidification process for crystalline silicon solar cells. An efficient algorithm for the calculation of view factors, which is essential in the modeling of radiative heat transfer, was developed for complicated 3D configurations. Some 3D features of such a solidification process will numerically investigated.
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中野 智, 劉 立軍, 柿本 浩一
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2006 年 33 巻 4 号 p.
181-
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2D-axisymmetric global simulation was carried out to analyze temperature and velocity fields during silicon crystal growth. Configuration of heaters were changed to clarify the effects of the height and the position of the heaters on temperature distribution. We used a system with 3 heaters; heaterl and 2, heaterl and 3, heater2 and 3. Total heater power was distributed the heaters. Distribution of power in the heaters was modified to study how such distribution modifies the temperature distribution. We studied the effect of input heater power distribution and position of heaterl and 2 on the melt-solid interface shape, the thermal field and convection of melt in the crucible.
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岩井 真, 下平 孝直, 市村 幹也, 東原 周平, 今井 克宏, 山崎 史郎, 永井 誠二, 平田 宏治, 川村 史朗, 川原 実, 森 ...
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2006 年 33 巻 4 号 p.
182-
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We have grown GaN single crystals by Na-flux method. We have succeeded in the demonstration of blue-LED operation using a polished GaN crystals as a substrate. Characterization of the substrates and MOCVD grown epitaxial films are also presented.
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森下 昌紀, 下條 亮平, 川原 実, 川村 史朗, 吉村 政志, 森 勇介, 佐々木 孝友
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2006 年 33 巻 4 号 p.
183-
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In the LPE growth of GaN single crystals using Na-based flux, frequent nucleation generated on the crucible is the most important problem. In this study, we investigated the metastable zone in which the nucleation does not occur except on the seed crystal.
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山田 高広, 山根 久典
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2006 年 33 巻 4 号 p.
184-
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The seeded growth of GaN single crystals was performed at 1173K and a N_2 pressure of 0.8-5.0 MPa by the Na flux method using Na vapor. Transparent colorless crystals were grown on M-plane (10-10) of prismatic GaN seed crystals in a Na-Ga melt. The thickness of the crystals grown on the seeds by heating for 72 h was approximately 150μm in the directions perpendicular to the M plane, implying a growth rate of at least 1μm/h.
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小椋 隆史, 今出 完, 川村 史朗, 吉村 政志, 北岡 康夫, 森 勇介, 佐々木 孝友
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2006 年 33 巻 4 号 p.
185-
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2H-SiC is an attractive material in the field of high-power devices due to the excellent properties such as the energy band gap widest among all polytypes and so on. The growth of 2H-SiC crystals requires the flux with low melting point since 2H-SiC is more stable at low temperature. We succeeded the solution growth of 2H-SiC using Li flux.
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今出 完, 北野 芳裕, 山田 憲秀, 川原 実, 川村 史朗, 吉村 政志, 北岡 康夫, 森 勇介, 佐々木 孝友
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2006 年 33 巻 4 号 p.
186-
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The growth of GaN crystals was conducted by GaH-VPE method. In this method, GaHx was used as Ga source, which enables us to grow GaN crystals with high crystallinity. However, the growth rate was lower than 20um/h because of low GaHx supply. In this work, the structure for the synthesis of GaHx was optimized to increase the reaction efficiency between Ga and H_2 gas.
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佐藤 史隆, 山根 貴好, 秋山 和博, 村上 尚, 熊谷 義直, 纐纈 明伯
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2006 年 33 巻 4 号 p.
187-
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Growth of AlGaN ternary alloy using AlCl_3 and GaCl gases as group III precursors was performed by hydride vapor phase epitaxy. C-axis-oriented AlGaN layers could be grown at 1100℃. We found that the solid composition x in Al_xGa_1 _xN ternary alloy could be controlled by changing the input Al mole ratio of the group III precursor (R_<Al>) and/or the low range (<10%) of partial pressure of hydrogen (H_2) in the carrier gas (F°).
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富樫 理恵, 佐藤 史隆, 村上 尚, 飯原 順次, 山口 浩司, 熊谷 義直, 纐纈 明伯
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2006 年 33 巻 4 号 p.
188-
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First-principles calculation and X-ray absorption fine structure analysis of Fe doping mechanism were performed for preparing semi-insulating GaN wafers using GaAs(111)A as a starting substrate. The Fe atoms incorporated in GaN were found to substitute Ga site, and the incorporation of Fe atoms in GaN was hindered by As incorporation in adjacent N site when degradation of back of the GaAs substrate was occurred.
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三浦 章, 嶋田 志郎, 関口 隆史
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2006 年 33 巻 4 号 p.
189-
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GaN crystals were grown at 1200℃ by vapor phase reaction of NH_3 and Ga_2O, produced by carbothermal reduction of Ga_2O_3 powder. In 2h growth, the slow Ga_2O flow rate (7-14 μmol/min^<-1>) gave millimeter-sized hexagonal prism wurtzite-type GaN crystals, while the high rate (21 μmol/min^<-1>) formed the needle crystals.
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水原 奈保, 宮永 倫正, 藤原 伸介, 中幡 英章, 川瀬 智博
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2006 年 33 巻 4 号 p.
190-
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High-quality 1-inch diameter AlN crystals have been successfully grown on SiC substrate by sublimation method. Crystalline quality was evaluated by X-ray diffraction and EPD measurement. It was found that crystalline quality of 1-inch diameter crystals was superior as well as that of 10mm diameter crystals whose properties had already been reported.
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吉川 彰, 荻野 拓, 鎌田 圭, ニクル マーチン
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2006 年 33 巻 4 号 p.
191-
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Single crystals with nominal composition of (Pr_x, Lu_<1-x>)_3(Ga_y, Al_<1-y>)_5O_<12> (Pr:LuGAG) were grown by the micro-pulling-down (μ-PD) method with RF heating system and their luminescent properties were characterized. Compostions of the crystals were analyzed by electron probe micro analysis (EPMA) measurements. Optical characterization such as photoluminescence spectra, radioluminescence spectra, light yield measurements and decay kinetics were studied. Lattice constants and densities of each crystal were determined. Lattice constants and densities were systematically increased with the amount of Ga concentration. Luminescent properties of Pr:LuGAG were characterized by photoluminescence spectra and decays, radioluminescence spectra and light yield measurements. 5d-4f luminescence was observed for 0≤y≤0.6 samples. It was found that 5d -4f emission of Pr^<3+> is quenched only slightly up to y≤0.4 while density is increased systematically in the range of 0≤y≤1.0.
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大谷 茂樹, 相澤 俊
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2006 年 33 巻 4 号 p.
192-
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(Ti_<1-x>Zr_x)C crystals were prepared by the floating zone method, x<0.4. Subgrain boundaries were removed by adding more than several mol% of ZrC. The group-III nitrides, GaN and AlN, were epitaxially grown on the (111) planes of the (Ti,Zr)C crystals by AP-MBE method.
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木村 秀夫, 棚橋 留美, 眞岩 幸治, 佐藤 卓
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2006 年 33 巻 4 号 p.
193-
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Yb_3Al_5O_<12> and Yb_3Ga_5O_<12> single crystals were grown by Fz technique. It is easy to grow Yb_3Al_5O_<12>, but difficult to grow Yb_3Ga_5O_<12>. We consider the difficulty of Yb_3Ga_5O_<12> crystal was due to a lattice parameter change caused by a deviation from stoichiometry.
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田中 功, 下村 巧, 相川 実里, 山中 美名子, イスラム ナズムル, 綿打 敏司
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2006 年 33 巻 4 号 p.
194-
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Crack- and bubble-free Cu^<2+>-substituted Ca_<12>Al_<14>O_<33> crystals were grown successfully using the feed over 0.5 at%Cu by infrared-heating FZ method. Cu^<2+>-doping may stabilize the molten zone during growth, and change the solid-liquid interface of the molten zone from concave close to flat.
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中原 崇博, 樋口 幹雄, 高橋 順一, 小川 貴代, 和田 智之
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2006 年 33 巻 4 号 p.
195-
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Nd:PrVO_4 and Nd:La_xGd_<1-x>VO_4 single crystals were grown by the floating zone method in order to broaden the absorption and emission bands of Nd^<3+>. Nd:La_xGd_<1-x>VO_4 (X≦0.15) and Nd:PrVO_4 single crystals had no macroscopic defects, whereas cellular structures were found in a Nd:La_<0.2>Gd_<0.8>VO_4 crystal. The absorption band of Nd:PrVO_4 around 808nm was broader than that of Nd:GdVO_4, and intensive absorption peaks were not observed around 1.06μm and 1.3μm.
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樋口 幹雄, 佐々木 亮, 高橋 順一, 小川 貴代, 和田 智之
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2006 年 33 巻 4 号 p.
196-
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Dy:GdVO_4 single crystals were successfully grown by the floating zone method. All the grown crystals had no macroscopic defects such as inclusions and low-angle grain boundaries. An intensive fluorescence peak was observed at 573nm, which is assigned to the radiation from ^4F_<9/2> to ^6H_<13/2>. The excitation spectrum for the 573nm emission had a peak around 450nm. These results indicate Dy:GdVO_4 single crystals can be one of the candidates for LD-pumped yellow-laser materials.
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下村 浩司, 折出 和章, 山邊 信彦, 乾 紘輔, 武田 祥宏, 芝滝 健太郎, 有屋 田修, 和田 元, 大鉢 忠
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2006 年 33 巻 4 号 p.
197-
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Low and high bright discharge modes of a nitrogen radical source were investigated for MEE (migration enhanced epitaxy) method of RF-MBE. The low bright (LB) mode and the high bright (HB) mode are the E mode discharge of capacitive coupling and the high- density H mode discharge of inductive coupling, respectively. The mode transition between LB and HB is applicable to MEE method of RF-MBE.
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乾 紘輔, 山邊 信彦, 武田 祥宏, 折出 和章, 下村 浩司, 芝滝 健太郎, 大鉢 忠
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2006 年 33 巻 4 号 p.
198-
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GaN films were grown on Si(111) by RF-MBE MEE method using the nitrogen exciting mode transition between the low bright discharge mode and the high bright one. The time sequence of Ga and N exposure was effective to control the thickness of the film and III/V flux ratio.
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山邊 信彦, 折出 和章, 下村 浩司, 武田 祥宏, 芝滝 健太郎, 乾 紘輔, 大鉢 忠
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2006 年 33 巻 4 号 p.
199-
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Hexagonal GaN(0001) films were grown on Si(111) by RF-MBE MEE method using the nitrogen mode change between high-bright discharge mode and low-bright one. It was found that inclusion of c-GaN into h-GaN controlled a time sequence by using PL and XRD.
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南 礼史, 高橋 功次, 荒木 努, 鈴木 悟仁, 大平 重男, 名西 〓之
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2006 年 33 巻 4 号 p.
200-
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β-Ga_2O_3 single crystal is a good candidate for GaN epitaxial growth due to transparency, electrical conductivity and high melting point. Previously, we succeeded epitaxial growth of cubic GaN on (100) β-Ga_2O_3 by RF-MBE through prior exposure of the substrate to ECR nitrogen plasma to form a surficial nitridated (001) cubic GaN layer. In this paper, we report on the MBE growth of hexagonal GaN films on the nitridated β-Ga_2O_3 substrates by ECR nitrogen plasma.
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G. Li, J. Ohta, S. Inoue, K. Okamoto, T. Nakano, H. Fujioka
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2006 年 33 巻 4 号 p.
201-
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We have grown GaN films epitaxially on W(110) substrates by using low-temperature AlN films as buffer layer by pulsed laser deposition (PLD). The as-grown GaN films contain no 30°rotational domains and have quite flat surfaces.
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小林 篤, 太田 実雄, 藤岡 洋
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2006 年 33 巻 4 号 p.
202-
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ZnO has been regarded as one of the most promising substrates for nonpolar GaN films because ZnO and GaN perfectly share the same crystalline symmetries and the lattice mismatches between them are as small as 1.9% and 0.4% for the a and c axes, respectively. We discuss the epitaxial growth of high-quality nonpolar GaN on nearly lattice matched a- and m-plane ZnO with the use of low temperature buffer layers which helps to suppress the inter facial reactions between GaN and ZnO.
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金 明姫, 尾嶋 正治, 小林 篤, 太田 実雄, 藤岡 洋
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2006 年 33 巻 4 号 p.
203-
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We have grown GaN and AlN films on atomically flat on-axis 4H- and 6H-SiC (0001) substrates at room temperature (RT) by PLD and investigated their growth mechanisms. We have found that the epitaxial growth of AlN and GaN films proceeds in the layer-by-layer mode even at RT and the surfaces were covered with atomically flat terraces separated by straight steps.
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井上 茂, 岡本 浩一郎, 中野 貴之, 藤岡 洋
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2006 年 33 巻 4 号 p.
204-
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We have grown group III nitrides on fcc metal substrates with high thermal conductivities such as Cu(111) and Ag(111) by pulsed laser deposition (PLD). We have found that the use of low temperature AlN buffer layers allow us to grow GaN films epitaxially. We have also found that the epitaxial relationship is GaN[0001] // fcc[111] and GaN[11-20] // fcc[1-10].
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堀田 昌宏, 須田 淳, 木本 恒暢
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2006 年 33 巻 4 号 p.
205-
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Growth of very high-quality nonpolar 4H-AlN (1120) on 4H-SiC (1120) substrate is presented. A reduction of defects such as stacking faults and threading dislocations was achieved by isopolytypical and coherent growth. Transmission electron microscopy revealed the stacking fault density to be 2×10^5cm^<-1>, and the partial and perfect threading dislocation density to be 7×10^7cm^<-2> and 1×10^7cm^<-2>, respectively.
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河野 哲, 小林 篤, 太田 実雄, 藤岡 洋
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2006 年 33 巻 4 号 p.
206-
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We have grown AlN films on MgO(001) substrates by pulsed laser deposition (PLD) and investigated their structural properties. We have found that semi-polar AlN (1012) grows epitaxially on MgO (001) at the growth temperature of 1000℃ with the in-plane alignment of AlN[1210]//MgO[110].
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寒川 義裕, 松尾 有里子, 秋山 亨, 伊藤 智徳, 白石 賢二, 柿本 浩一
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2006 年 33 巻 4 号 p.
207-
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We carried out theoretical analyses based on the ab initio calculations incorporates free energy of vapor phase in order to find the initial growth process of cubic GaN in GaN(001)-(4x1). The results suggest that N attached structure appears at the initial growth stage, and then Ga adsorbs on the N attached GaN(001)-(4x1) surface. Considering these process, we performed Monte Carlo simulations. The results imply that maximum point of Ga coverage after 1/32 monolayer supply shifted toward Ga-rich condition from V/III=1.0.
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河村 貴宏, 寒川 義裕, 柿本 浩一
原稿種別: 本文
2006 年 33 巻 4 号 p.
208-
発行日: 2006/11/01
公開日: 2017/05/31
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We investigated the thermal conductivity of GaN/AlN quantum dots by molecular dynamics simulation. Equilibrium molecular dynamics based on Green-Kubo's formula was employed for calculation of thermal conductivity. The results showed that the value of thermal conductivity in the a and m-axes directions had increased with increasing the thickness of superlattice period.
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成塚 重弥, 大坪 弘明, 近藤 俊行, 山本 陽, 丸山 隆浩
原稿種別: 本文
2006 年 33 巻 4 号 p.
209-
発行日: 2006/11/01
公開日: 2017/05/31
ジャーナル
フリー
The "droplet epitaxy" technique requires neither the induction of surface strain nor any antisurfactants, which means the possibility of the QD formation on any substrates. In this study, we have used NH_3 as the group V source in droplet epitaxy, since it doesn't induce any ion damage during nitridation. The effect of ammonia-ambient post-growth annealing in this technique is investigated.
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菅井 麻希, 木村 俊博, 小山 裕, 丹野 剛紀, 西澤 潤一
原稿種別: 本文
2006 年 33 巻 4 号 p.
210-
発行日: 2006/11/01
公開日: 2017/05/31
ジャーナル
フリー
InP ELO layers were formed at the constant growth temperature by LPE. There were dislocation free ELO layer from L-shaped pattern and dislocated ELO layer from facing L-shaped pattern on the same substrate. Small area SB junctions were made on the dislocated and dislocation-free ELO regions, then the deep levels were evaluated by the 30K-photocapacitance measurements. As the results, the dislocation-induced deep levels were confirmed, and the detailed optical transitions were discussed from the results of the excitation photocapacitance methods.
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佐藤 翔太, 大野 武雄, 田邉 匡生, 小山 裕, 西澤 潤一
原稿種別: 本文
2006 年 33 巻 4 号 p.
211-
発行日: 2006/11/01
公開日: 2017/05/31
ジャーナル
フリー
GaAs/GaAsSb/GaAs structures were epitaxially grown on (100), (111)A, (111)B and (110) S-I GaAs substrate at the same growth run by using the molecular layer epitaxiy (MLE). These structures were evaluated by precise X-ray diffraction, secondary ion mass spectroscopy and RT< photoluminescence measurements. It is shown that the extremely steep Sb profile was realized with 10nm-thick GaAsSb layer on (001)-GaAs substrate, and orientation-dependences on the characteristic features of grown layers will be discussed.
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黄 晋二, 西田 雅宏, 国吉 幸浩, 黄 新明, 宇田 聡
原稿種別: 本文
2006 年 33 巻 4 号 p.
212-
発行日: 2006/11/01
公開日: 2017/05/31
ジャーナル
フリー
Crystallization electromotive force (EMF) during the growth of LiNbO_3 (LN) was investigated using a μ-PD method. The mechanism of crystallization EMF during LN growth was explained using a model where segregated ionic species in the melt formed a net ionic charge at the interface resulting in the development of an EMF. Growth-rate dependence of Crystallization EMF was analyzed using one-dimensional diffusion equation.
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