日本結晶成長学会誌

Global axisymmetric and local 3D calculations have been performed for obtaining the melt convection and temperature field in Czochralski environment for growing silicon crystals. The influence of a travelling magnet field (TMF) on the melt flow is discussed with respect to the occurence of {110} facets during growth experiments in a TMF travelling down in the side heaters.

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Conventionally grown Czochralski (Cz) silicon crystals for photovoltaic application are of unfavourable cylindrical shape leading to essential material loss during the wafer cutting process. Additionally, the typical high oxygen concentration promotes the solar cell degradation. In this paper the attemps to grow Cz silicon crystals with both quadratic cross section and relatively low as-grown oxygen content are summarized. A favourable technique is described wich allowed the pulling of 10 cm long rectangular Cz ingots with square coss section of 91×91 mm^2 and interstitial oxygen content of 7×10^<17>cm<-3> by {110} facetting along the [001] orientation. In order to obtain stable very low radial temperature gradient at the melt-solid periphery, as a prerequisit of pronounced facetting, travelling magnetic fields (TMF) have been applied. Such non-steady magnetic field is generated simultaneously within the heater around the crucible. It induces a very stable high-speed toroidal convection roll between crucible and growing crystal graduating the temperature distribution along the free melt surface that promotes the apperance of large {110} facet.

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Siのファセットデンドライトの結晶組織や成長機構は,一般的な金属のデンドライトとは大きく異なっている.ファセットデデンドライトの中心部には2つ以上の{111}双晶界面が含まれているが,この双晶界面が成長機構や成長速度にどのように影響を及ぼすのか,あまり理解されていなかった.本稿では,融液成長過程のその場観察実験による,Siのファセットデンドライトの成長機構に関する最近の研究成果について紹介する.

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金属合金の凝固過程の時間分解イメージング(凝固その場観察)がSPring-8などの第3世代放射光施設で可能になりつつある.透過X線像の輝度と線吸収係数の定量的関係が得られれば,凝固過程の溶質分布の時間分解2次元測定が実現でき,得られた定量データはいろいろな利用ができる.本稿では,Fe-Si合金をモデルにデンドライト周辺のSi濃度分布の測定を試行した結果を報告する.

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