Starting with the BCF theory recent crystal growth models based on computer simulations are discussed. These models are confronted with experiments for growth from the vapor and solution concerning rates of growth and the direct observations of step patterns, growth spirals and etch pits.
Experimental and theoretical studies were carried out on a new liquid-phase epitaxy (LPE) where a dummy GaAs crystal was placed on the top of a thin Ga solution to control initial supercooling. It has been shown that initial supercooling can be controlled by two growth parameters: cooling rate and solution thickness. Thin GaAs grown layers less than 1μm-thick with a smooth surface were obtained with thickness uniformity of ±8%, and reproducibility of less than ±7%. By comparing experimental and theoretical results, it was concluded that the stirring of the solution existed during the growth process. It has been confirmed that the present method is readily applicable to continuous growth of thin multi-layer GaAs crystal.