The purpose of this report is (1) to show the relationship among the dislocation generation and growth conditions in the Czochralski grown KCl crystals and (2) to elucidate the mechanism of dislocation generation during growth. The following growth factors were examined; (i) temperature gradient, (ii) growth rate, (iii) crystal rotation rate, (iv) crystal diameter and (v) impurity doping Furthermore, the effect of the cyclic annealing upon the reduction of the dislocation density was also examined. Dislocations in KCl crystals are much easier to multiply than those in covalent crystals and metals owing to the following reasons; (i) the highly stress sensitive dislocation mobility, (ii) the high thermal expansion coefficient, (iii) the low thermal conductivity, and hence special attention has been paid to the effect of the thermal stresses in this work.
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