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Volume 12 (1988)
- Issue 5 Pages 597-
- Issue 4 Pages 537-
- Issue 3 Pages 479-
- Issue 2 Pages 55-
Volume 12, Issue 5
Displaying 1-2 of 2 articles from this issue
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Papers
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K. Nago1988 Volume 12 Issue 5 Pages 597-601
Published: November 30, 1988
Released on J-STAGE: January 11, 2013
JOURNAL OPEN ACCESSStructure dependence of magnetic properties of Fe-Al-Si (Sendust) alloy films was studied. The films were fabricated by electron beam evaporation method. The structure was changed by annealing or substrate temperature. Annealing improved the soft magnetic properties of the films. X-ray diffraction showed that the stress in crystal grains in the films decreased and ordering of the DO3 structure was enhanced by annealing. On the other hand, however both grain size and degree of orientation of the film were changed by the substrate temperature, soft magnetic properties depend strongly on degree of orientation.View full abstractDownload PDF (290K) -
Y. Maruyama, R. Suzuki1988 Volume 12 Issue 5 Pages 602-607
Published: November 30, 1988
Released on J-STAGE: January 11, 2013
JOURNAL OPEN ACCESSA primary operation of Bloch Line (BL) memory chips has been demonstrated with improvements of write and read functions. A novel write gate using a simple sequence has been proposed. Four BL's generated by the write current are converted into one stable BL pair, collapsing two BL's by Bloch point nucleation. The stable BL pair has been generated in the write current range of 110-130 mA (17% margin) under the in-plane field of 3 Oe. For a read gate, BL separation by a local in-plane field realizes a discrimination between a σ or χ stripe by chopping a stripe head. A σ stripe head can be chopped into a bubble in the read current range of 148-185 mA (22% margin) under the in-plane field of 3 Oe. With these functions connecting to a current-access propagation track, the shift register operation has demonstrated the possibility of BL memory devices.View full abstractDownload PDF (335K)
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