In the first half of this work, a magnetoplumbite-type of Ba ferrite (BaM) layers were deposited from BaFe
11O
19-y targets and BaFe
13O
19-y ones on a ZnO(001) underlayer in a gas mixture of Ar, Xe, and O
2 using facing targets sputtering apparatus. It was clarified that a stoichiometric composition is necessary for preparing Ba ferrite films with large saturation magnetization 4πM
s and excellent perpendicular anisotropy. Ba ferrite films deposited at optimum conditions exhibited large 4πM
s of 4.7 kG and high perpendicular coercivity H
c⊥ of 2.4 kOe and low in-plane one H
c// of 0.2 kOe even when substrate temperature T
s was as low as 475°C. In the latter half of this work, Al substituted Ba ferrite films were deposited from BaFe
11Al
1O
19-y targets and BaFe
10Al
2O
19-y ones on Pt (111) underlayer for increasing H
c⊥ and perpendicular squareness S
c⊥. Although 4πM
s decreased with increase of substitution amount x, H
c⊥ increased even for as-deposited films. S
⊥ increased after annealing at 850-900°C for 15 min in air the maximum S
⊥ of 0.91 was attained for films deposited from BaFe
10Al
2O
19-y target.
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