日本応用磁気学会誌
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
27 巻, 12 号
選択された号の論文の2件中1~2を表示しています
論文
  • 高橋 弘紀, 梅本 千巧, 茂木 厳, 淡路 智, 小山 佳一, 本河 光博, 渡辺 和雄
    2003 年 27 巻 12 号 p. 1125-1129
    発行日: 2003年
    公開日: 2006/09/22
    ジャーナル オープンアクセス
    Processing of materials under the magnetic levitation condition is an important new technique for synthesis of novel materials, because containerless melting can be performed in a quasi-microgravity environment. For materials with anisotropic magnetic susceptibility, the magnetic orientation effect can be expected in addition to the microgravity effect. We performed containerless melting of paraffin under the magnetic levitation condition, using a newly developed YAG laser furnace, in order to examine the possibility of synthesizing oriented spherical materials. By magnetization measurement and X-ray diffraction measurement, we confirmed the orientation of paraffin solidified under the magnetic levitation condition. This containerless melting method is expected to provide opportunities for obtaining materials with new functions.
  • 吉村 哲, 角田 匡清, 尾形 聡, 高橋 研
    2003 年 27 巻 12 号 p. 1130-1134
    発行日: 2003年
    公開日: 2006/09/22
    ジャーナル オープンアクセス
    Langmuir probe diagnosis and optical emission spectroscopy were performed for microwave-excited plasma in order to clarify the physical factor in changing the transport properties of Co-Fe / AI-O / Co-Fe magnetic tunnel junctions (MTJs) fabricated with Ar+O2, Kr+O2, He+O2 plasma. The main results were as follows: (1) Kr reduces the electron temperature of plasma at the substrate position, minimizing the ion irradiation damage during formation of an ultra-thin Al-O barrier. (2) The oxidizing species excited in plasma, such as O-radicals and O2-ions, are drastically changed with changes in the inert gas species mixed with oxygen. The maximum energy of oxidizing species corresponds closely to the energy level of inert gas radicals. (3) O(2p)1D radicals, which have a long life, are effectively produced in Kr+O2 plasma and lead to a high oxidization rate of A1 films.
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