We previously reported that the electric permeability ε
r' of ferromagnetic nanocomposite oxide sputtered films with a Bi
2O
3-Fe
2O
3-PbTiO
3 ternary system is subject to change with an external magnetic field
H and that electric polarization induced by a small ac magnetic field, Δ
Ph(ω), is observed. To explain these experimental results, we proposed a model based on magnetization rotation of ferromagnetic nanoclusters dispersed in a dielectric matrix. However, it was found that, when Si-wafers are used as substrates, a depletion layer attributed to the MIS structure is formed in the film-to-Si interface, which seriously affects measurements of the magnetic-field-sensitive portion of the permeability Δε
r'(
H). In order to eliminate this completely, we used heavily doped n
+-Si wafers (ρ = 0.0016 Ωcm) as substrates, by which means we were able to obtain accurate Δε
r'(
H)-value for a wide range of frequencies. In addition, we measured the temperature dependence of Δε
r'(
H) and the saturation magnetization, 4π
Ms, of a film to seek for the mechanism of this electromagnetic effect, as a result of which a close correlation was found to exist between Δε
r'(
H) and 4π
Ms.
抄録全体を表示