For the development of room temperature spin-filtering devices with a ferromagnetic barrier, very thin ferromagnetic barrier films were required. Co-ferrite thin films are prepared by the surface plasma oxidization of a CoFe
2 underlayer deposited on MgO (001) single crystal substrates. During oxidization, the substrate temperature was varied from 523 K to 673 K. The plasma oxidized CoFe
2 films had a spinel structure, 4-fold symmetry in the plane, and an epitaxial relationship with the CoFe
2 underlayer. The lattice parameter of Co-ferrite thin film was 0.828 nm, which is 1.2% less than that of bulk. The interface between the CoFe
2 and its oxide was relatively smooth. When the substrate temperature during plasma oxidization was lower than 623 K, magnetization of CoFe
2 and Co-ferrite rotated independently. XPS and MOKE measurements identified that the hard and soft phases as Co-ferrite and CoFe
2, respectively. Measurements of the magnetic properties showed that the magnetization of the Co-ferrite thin films was about 1100 emu/cm
3, which is 2.6 times more than that of bulk (420 emu/cm
3). This phenomenon may be explained by the exchange of Co and Fe cation distribution in our Co-ferrite films.
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