A new preparation method for γ-Fe
2O
3 thin film recording media has been established.
Using sintered Fe
3O
4 plates as targets, magnetic film are directly formed through ordinary r. f. sputtering in argon atmosphere. Those as-sputtered film compositions were examined and confirmed to be Fe
3O
4, which were formed over wide sputtering condition range.
In order to realize high-rate sputtering, planar magnetron r. f. sputtering was attempted. Sputtering rates several times higher than those for ordinary sputtering were obtained. A rate as high as 2, 000 Å/min was attained at high power densities. These as-sputtered films were also confirmed to be Fe
3O
4 and formed over wide ranges of argon pressure 2×10
-3-5×10
-2 Torr, substrate temperature; R. T.-300°C, and target-substrate distance 2-4cm. Thus, the present method assures high productivity and reproducibility.
Effects of other elements doping have been investigated to improve Fe
3O
4 film properties. As doping elements, cobalt and copper were chosen. Copper promoted oxidation from Fe
3O
4 to γ-Fe
2O
3. It was revealed that γ-Fe
2O
3 films (ρ=1×10
3Ω·cm) on anodized aluminum alloy substrates, obtained by high-rate sputtering of 2% Co, 2% Cu doped Fe
3O
4 target, had magnetic characteristics suitable for high recording densities.
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