Garnet LPE films containing bismuth which support 1 μm bubbles have been grown on (111) GGG substrates. Gallium substituted garnets, such as YSmTmBiGa, YTmBiGa and LaSmLuGa films, have good properties at room temperature, e.g., low damping, small collapse field (
Hco1) and small crystalline anisotropy constant (|
K1|). These films are not suitable for bubble propagation at higher temperatures because of too low Curie temperature (
Tc) after ion implantation. On the other hand, calcium germanium substituted garnets, such as GdSmTmBiCaGe and YSmTmBiCaGe have higher
Tc and larger negative magnetostriction coefficient,
λ111. However,
Q factor or characteristic length (
l) is restricted by small Sm
3+ contents in these films. By substituting Si
4+, instead of Ge
4+, we can get much room to adjust the film properties. GdSmLuBiCaSi films have zero temperature dependence of
Hco1. Temperature coefficient of
Hco1 for YGdSmLuBiCaSi is −0.2%/°C Atomic compositions for BiCaSi substituted films are analyzed. Y
3+ and Lu
3+ are partially substituted into a-site. Distribution coefficients for Y
3+, Gd
3+, Sm
3+ and Lu
3+ are estimated.
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