Surface analysis methods are widely used during the fabrication process of advanced devices. For practical applications in advanced industries, surface analysis methods should be standardized by the establishment of traceability and with the development of measurement procedures and certified reference materials. Measurement traceability for surface analysis is established by key comparisons (KCs) by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). Thus far, two KCs for thickness measurements of nm SiO₂ films (K-32) and for analyses of the atomic fractions of Fe-Ni alloy films (K-67) have been performed. International standards for surface chemical analysis procedures have been developed by ISO/TC-201. Fifty nine international standards have been published. The Korea Research Institute of Standards and Science (KRISS) has participated in key comparisons of the CCQM SAWG as the national metrology institute (NMI) of Korea. KRISS has also participated in ISO/TC-201 to develop international standards for surface analysis using XPS, AES and SIMS. Three types of thin-film certified reference materials have been developed by KRISS.

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The electronic structure of a Ta₂O₅ thin film on SiO₂/Si (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the Ta₂O₅ thin films. Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

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Arガスクラスターイオンビーム（Ar Gas Cluster Ion Beam: Ar-GCIB）エッチングを用いて強誘電体材料であるBaTiO₃単結晶の表面清浄化およびXPS測定を試みた．特に，誘電特性に影響のあるTiおよびBaの化学結合状態に着目し，エッチングダメージの有無を評価した．また，比較のためArモノマーイオンエッチングを用いた清浄化も行った．その結果，Ar-GCIBエッチングを用いた表面清浄化（ビームエネルギー：2.5 keV，クラスターサイズ：2000，エッチング時間：～240 sec）では，TiおよびBaのXPSスペクトルがともに変化しなかった．一方，Arモノマーイオンエッチングによる表面清浄化（ビームエネルギー：2 keV，エッチング時間：～240 sec）では，BaTiO₃構造中のTi⁴⁺が還元され，Ti³⁺の成分が現れることが明らかとなった．また，Ba 3dのXPSスペクトルにも2 eV程度のピークシフトが高束縛エネルギー側に生じた．従って，Ar-GCIBエッチングはBaTiO₃単結晶の表面清浄化に有効であるといえる．

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AESにおいてスパッタ深さ方向分析を行う場合，試料表面に対するイオンの入射角度はその目的に応じて選択される．スパッタイオンを試料表面に対して低角度で入射すると深さ分解能を向上させることできる．イオンの低角度での入射を実現するためには傾斜試料ホルダーとサンプルステージの回転を用いる必要がある．ステージの傾斜角と回転角の誤差がイオン入射角に与える影響について検討し，いくつかのAES装置のイオン銃の配置の場合について計算した結果を報告する．

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