The fundamental characteristics of the natural diamond milling process were investigated using 30 keV Focused Ion Beams. The processing yield of milling diamond with normal incidence was 0.08μm
3/nC. There was no difference in yield between the diamond crystal orientations (100), (110), and (111). The dependence of yield on the incident angle was also measured. The maximum yield was observed at an incidence of 87°, and was sixfold greater than the value at normal incidence. When the H
2O-assisted etching process was used, the yield increased by fourfold, and the roughness of the processed surface was smoother in comparison to the process without the gas assist. The practical processing rate was estimated to be 0.14–1.1 m
3/s at a beam current of 1.6–17 nA without gas assist.
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