In the polishing process, the removal rate is strongly dependent on the pad surface asperity. We have developed a quantitative evaluation method based on contact image analysis using an image rotation prism. This paper discusses the effects of pad surface asperity on removal rate for Si wafers based on various polishing tests. The results indicated a high removal rate for the following case: number of contact points, 30/mm
2; contact ratio, 0.8%; maximum value of the minimum spacing of contact points, 450 μm; and half-width of the peak of spatial FFT, 100 μm. Furthermore, the maximum value of the minimum spacing of contact points was the most effective parameter as determined by multiple correlation analysis for four evaluation parameters.
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