The Review of High Pressure Science and Technology

Progress in High Pressure Semiconductor Physics

Shigeru Minomura

1994 Volume 3 Issue 3 Pages 197-198
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.197

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Pressure-Induced Structural Phase Transition of VIb Element, S, Se, Te and Solid C₇₀

Yuichi Akahama, Mototada Kobayashi, Haruki Kawamura

1994 Volume 3 Issue 3 Pages 199-206
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.199

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X-ray diffraction measurement for selenium and sulfur under high pressure was performed through the angle dispersive method. The structural-transition sequence similar to that of Te was found and the unified interpretation was obtained for pressure-induced structural phase transition of VIb element except for oxygen. In the case of solid C₇₀, the transition from fcc to a simple rhombohedral structure was observed and the rhombohedral phase was concluded to be realized by the partial freezing out of molecular rotation.

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Effect of Pressure on the Amorphous Ge-Chalcogenide Materials

Seinosuke Onari

1994 Volume 3 Issue 3 Pages 207-213
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.207

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The effects of the hydrostatic pressure on the optical gap E_g of the amorphous Ge-chalcogenide semiconductors are reviewed. The absorption edge E_g shifts largely to low frequency side and the parameter Γ of the Urbach tail increases with the increase of the pressure. For the composition near GeS₂, sudden anomalous changes of E_g and also Γ are observed in the pressure range of 2∼4 GPa. These anomalous effects are considered to originate from the change of the internal structure. Raman spectra exhibit interesting large change under the pressure especially in the low frequency region, and the characteristic properties of the Raman spectra of the amorphous Ge-chalcogenide semiconductors are also reviewed.

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Pressure Effects on the Electronic Structures in Quasi One-Dimensional Platinum Compounds

Noritaka Kuroda

1994 Volume 3 Issue 3 Pages 214-220
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.214

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The relationship is outlined between the mixed-valence state and the electronic structure in the halogen-bridged platinum compounds. Pressure dependences of the optical absorption edge and the Raman frequency of halide stretching mode are interpreted in terms of the electron-lattice coupling characteristic of the PtX chains. Presented are the results of the recent optical experiments on the pressure-induced phase transition in PtCl and PtBr, demonstrating the role of the long range order among the chains. Also discussed is the behavior of the midgap absorption band, which is attributable to solitons, in PtCl under high pressures.

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Photoluminescence in Semimagnetic Semiconductors CdMnTe

Jun'ichiro Nakahara

1994 Volume 3 Issue 3 Pages 221-226
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.221

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The photoluminescences (PL) in semimagnetic semiconductor CdMnTe are reviewed except quantum wells. There are three kinds of PL related to energy gap, excited states of d-electrons with the character of localized states and unknown infrared PL. The formation of magnetic polaron, giant g-factor of electrons and holes of band, stable point of excited Mn ion are discussed from photoluminescence. The excited states of infrared PL is assigned as d-electron excited states with large lattice distortion using pressure coefficient of photoluminescence peak energy and time profile of the PL intensity.

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Electronic Strucure of GaAs/AlAs Short-Period Superlattices Studied by Photoluminescence Spectroscopy under High Pressure

Fujio Minami

1994 Volume 3 Issue 3 Pages 227-234
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.227

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we review the electronic structure of GaAs/AlAs short-period superlattices, which have been clarified through optical measurements under high pressure. The symmetry of the conduction subband in the superlattices is discussed on the basis of the pressure dependence of the photoluminesce. Based on the energy and lifetime vs. pressure data, pressure-induced Γ-X band mixing effect is also discussed In addition, we describe the band discontinuity in GaAs/AlInP quantum well structures, which has been determined by high-pressure photoluminescence measurements.

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Pressure Dependence of Photoluminescence in GaInP Grown by Metalorganic Vapor Phase Epitaxy

Toshihiko Kobayashi

1994 Volume 3 Issue 3 Pages 235-240
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.235

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High-pressure photoluminescence (PL) studies of ordered Ga_{0. 5}In_{0. 5}P alloys grown on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) are reviewed. The anomalous reduction in the direct band-gap energy and the high-pressure PL behavior depend on growth temperature and substrate misorientation. The possible explanations for some of the trends and the complexities involved in PL properties in ordered GaInP samples are presented, which include effects of repulsion between theΓ-folded energy states in the CuPt-type ordered structure.

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Pressure-induced effects on resonant tunneling

Kenichi Takarabe, Masaharu Takumi, Shigeru Minomura

1994 Volume 3 Issue 3 Pages 241-245
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.241

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Current-voltage characteristics of triple barriers resonant tunneling diodes has been measured at a temperature of 77 K and pressures up to 2 GPa. Peak-to-valley current ratio (PVR) of the diode decreased as increasing pressure. This change is explained qualitatively in terms of a variation of the effective mass of electron under pressure.

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Density Measurement for Expanded Fluid Selenium up to the Liquid-Vapor Supercritical Region by the X-ray Absorption Method

Shinya Hosokawa, Takeshi Kuboi, Kozaburo Tamura

1994 Volume 3 Issue 3 Pages 246-254
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.246

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Density of expanded fluid selenium was measured in the temperature and pressure ranges up to 1650°C and 700 bar including the liquid-vapor critical point by the x-ray absorption method . For the measurements, a new type of cell made of polycrystalline sapphire and a high-pressure vessel of authors' own design were developed We obtained the critical temperature, pressure and density of 1615±5°C, 385±5 bar and 1. 85±0. 03 gcm³, respectively. The anomaly that isochores bend in the semiconductor-metal transition region was observed, and we found that the isochores again bend in the metal-insulator transition region near the critical point. The diameter in the liquid-vapor coexistence curve is deviated strongly from the law of the rectilinear diameter to the liquid side near the critical point.

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Utilization of Hydrothermal Reaction in Explorating Energy Resources

As the basis for developing new technologies in explorating energy resources such as heavy oils, oil sands and coals, hydrothermal reaction is interesting, being considered as one of the means of util

Heiji Enomoto, Takehiko Moriya, Atsushi Kishita

1994 Volume 3 Issue 3 Pages 255-263
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.255

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High-Pressure Brillouin Scattering Measurements Using a Diamond Anvil Cell

Shigeo Sasaki, Hiroyasu Shimizu

1994 Volume 3 Issue 3 Pages 264-265
Published: August 20, 1994
Released on J-STAGE: August 07, 2009

DOIhttps://doi.org/10.4131/jshpreview.3.264

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High-pressure Brilloum scattering measurements with a diamond anvil cell are presented for determinations of acoustic velocity, refractive index, elastic constants and equation of state.

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