This article describes how to make a phosphor screen with slurry method. The peculiar technologies in the color screen manufacturing are especially described in detail. Those are concerned with screen configuration, photoresists, principle of light source correction, print-down in negative matrix, pre-coating, phosphor slurry, slurry coating, developement of exposed films, and filming.
Recent syudies on the thermal stability of zirconia ceramics were summarized. Although yttriadoped tetragonal zirconia polycrystals (TZP) show excellent mechanical properties, the fracture strength was greatly degraded by annealing at low temperature such as 200°C in air. This is due to the formation of microcracks accompanied with the tetragonal to monoclinic phase transformation. The phase transformation was induced by the chemical reaction between ZrO2 and H2O adsorbed on the surface. The thermal stability of TZP could be improved by decreasing the grain size of zirconia, dispersing Al2O3 and alloying with CeO2.
Recent studies on amorphous silicon thin film, which have been utilized for large-area electronic devices such as solar cells, electrophotographic drums, and thin film transistor (TFT) arrays, are reviewed in terms of their general properties and film growth processes together with the recent progress in understanding chemical processes on the growing surface. Current topics on these subjects are also presented.
A gas discharge type FAB source has been studied as a primary beam source for SIMS. The source consists of an anode, two cathodes and Sm-Co ring magnets which produce axial magnetic field between the anode and the cathodes. A cold cathode discharge is generated between the anode and the cathodes after introducing oxygen gas into the source. Oxygen ions which are created in the glow of the discharge and then accelerated towards the cathode, become atoms again with high energy by capturing electrons through soft contact with oxygen molecules or by recombination with electrons. The fast oxygen atoms have kinetic energy of 400-3000eV and a flow of 1013-1014 atoms/sec. The neutralization coefficient of the fast atoms is less than 50%. SIMS spectra for Al are obtained by using the FAB source.
A focused fast atom beam source (Focused FAB Source) has been developed by combination of a focused ion source and an ion neutralizer. The source, which consists of a Ga liquid metal ion source, an electro-static lens and a beam scanner, emitts a Ga ion beam of 10 im in the spot size which is measured through observation of absorption current images of a Mo mesh. The focused ion beam, which passes through the low energy electron cloud generated in the ion neutralizer, is changed into a focused atom beam by recombination with electrons. The focused FAB source emitts a Ga atom beam with 7-13 keV of kinetic energy, 30 pA of beam current, and 10 μm of beam diameter. The neutralization coefficient of the ion neutralizer is estimated through intensity ratios for secondary ions by constructing a FAB-SIMS with the focused FAB source and a quadrupole mass spectrometer. It increases with the filament current and bias voltage for the ion neutralizer and saturates at 10%.
The photoelectric emission with low-energy ultraviolet radiation, whoes intensity is measured by using an atmospheric low-energy electron counter in the atmosphere, has been studied for Au surface and LB-films on Au. In order to investigate the energy distribution of electrons, spectro-scopic analysis is also made with a hemispherical spectrometer under vacuum. The observed spectra distribute with the kinetic energy of 0 eV∼(hv-φ) eV, where hy and φ indicate the incident energy and work function respectively, and shift according to the incident energy. The dependence of the photoelectron intensity on the incident energy in the atmosphere is almost the same as that of vacuum. However, the observed threshold energies for photoelectric emission in the atmosphere is slightly different from that in vacuum. The energy distribution of the cross section for the attachment of electron to oxygen molecule, which is supposed to be the carrier of low-energy electron in the atmosphere, might cause such a difference. Further, the mean free path of low energy electron is estimated for LB-film to be 15 Å in the atmosphere and 41 Å under vacuum. The difference between them can be partially accounted in terms of the difference of the threshold energies men tioned above.
This system was designed by us for the intensity-voltage curve measurements at the TV rate and for the analysis of the shape diffraction images. A frame memory was employed and it was connected through the bus line to the microcomputer. A scheme of this intensity measurement is desc-ribed. This system was applied to the analysis of Al overlayers on Si(111).
The formation of Co-Mn composite oxide films on stainless steel electrodes from the dilute aqueous solutions containing Co2+ and MnO4- ions was studied by the galvanostatic method. It was found that the electrodeposition rates of tha redox reaction products in the solutions were determined by the degree of the supersaturation and the current density. The former had much more influence on the electrodeposition rate than the latter. The degree of the supersaturation depends on the concentration of the reagents and the temperature. The films can be formed from the dilute aqueous solutions at the very low current density and the room temperature.