Laser induced neutral particle emission was observed. When Al surface was irradiated by a Q-switched YAG 532nm beam with energy density below 2J·cm-2, only neutral atoms were detected. The amount of ejected atoms and their kinetic energies were measured as a function of laser fluence. Both the results indicate that increase of the surface temperature exceeds several thousands Kelvin, and the mechanism of atom emission around this energy region follows statistical thermodynamics.
A soft X-ray photoelectron spectroscopy with Zr Mζ radiation is used to investigate semiconductor surfaces. Zr Mζ photons of 151.4eV energy have good surface sensitivity, because Si2p photoelectron energy was about 50eV where the escape depth reaches minimum (0.5nm). The surface sensitivity was 10times higher than these in conventional techniques, and this result was in good agreement with that of theoretical calculation according to the difference of electron escape depth. Thanks to this high surface sensitivity, the Surface Core Level Shift (SCLS) was found to be -0.5eV in Si (100) 2×1 surface. We also used this technique to study the oxygen adsorbed surfaces layers at room temperature on Si (100) 2×1. The significant difference in photoelectron spectra was observed after annealing above 650°C.
Hardness and structure of diamond thin films prepared by deflected beam of methane ions in comparison with the direct flow have been studied. The physical and structural properties of the films were examined through scanning electron microscopy (SEM), transmission electron diffraction (TED), transmission electron microscopy (TEM), and micro-Vickers hardness measurements. The results show (i) the surface morphology of the films prepared by deflected methane ions suggested a relatively better surface when it is compared with those of direct flow, (ii) TED observation of deflected ions indicated a fine spotty patterns with a large grain size polycrystalline, and (iii) a relatively higher hardness was attained for the films grown by bended ion beam.