Electronic states of monolayer graphite formed on TiC (111) surface have been investigated by means of LEED, XPS and UPS. The chemical shift of XPS Cls peak has indicated that a small amout of charge (10_-2 electrons per carbon atom) transfers from the substrate to the monolayer graphite, which is in consistent with the work function change. In addition, UPS spectra has shown a large change in the energy band structure of the graphite layer. From those data, it has been concluded that the change in the electronic states originates mainly from the interaction between the overlayer and substrate.
Much data on sputtering yields under the bombardment of non-reactive ions such as Ar+, Ne and other ions is avaibable, at present, but not for the sputtering of the samples in secondary ion mass spectrometry (SIMS) analysis. In the analysis, chemically active primary ion species such as O2+, Cs+ and O- ions have been used widely, and thus the primary ion species are im-planted into the sample surface layers. As a result, the mixing layers (compounds), composed of primary ion species and sample elements are formed during the subsequent sputtering processes. Therefore, from a practical perspective, it is necessary to measure the sputtering yields of the target having a different constitution from the original under chemically active ion sputtering. This paper presents the sputtering yields of Si (Ys) in an oxidized SiO2 layer, and the Si sub-strate, sputtered by cesium (Cs) and oxygen (O2) ion beams. The quantitative sputttering yields were measured from sputtered crater volume after sputtering, and from sputtering rate under ion bombardment. The values of Ys for SiO2 layer during Cs+ and O2+ bombardment at 15 keV measured by spur tering rate method were respectively 1.3 and 2.4 atoms /ion. For Si substrate, the values were 2.7 and 5.4 atoms/ion respectively.