We have investigated the Auger depth profiling analysis of InP/GaInAsP multilayer specimens. It is difficult to obtain the Auger depth profile of InP sample by argon ion sputtering because it causes a great increase in surface roughness of the specimens. In order to reduce the roughness caused by the argon ion bombardment, the Zalar rotation method and sample cooling method were applied to the depth profile analysis of InP/GaInAsP specimens. The ion species used for sputtering was Ar+. Ar+ accelerating voltage was 1.0kV. The electron accelerating voltage was 5keV, the beam current was 0.1 μA and measured Auger lines were In-MNN, P-LVV, Ga-LMM and As-LMM. The Zalar rotation method gave good results in the depth profiling of In-MNN and P-LVV. The surface roughness was observed by SEM. On the other hand, the sample cooling liquid nitrogen temperature gave excellent analytical results the depth resolution was about 80Å at the depth of 4600Å. We found few cones on the sample surface after depth profiling analysis using the sample cooling method.
Surface structures of the acrylate resin substrates with and without plasma exposure were analyzed by SEM, XPS, and static SIMS in order to examine the influence by plasma exposure prior to sputtered film deposition. In general, both the morphology and composition of a resin surface are changed by plasma exposure. However, it was found that the difference in the surface roughness was hardly discernible at the initial stage of the exposure. On the other hand, surface chemical structures such as functional groups are markedly modified. Furthermore, analysis of XPS valence band spectrum based on the molecular orbital calculation has been successfully applied to distinguish the position of cleaved band in the molecule. The results obtained from XPS and static SIMS analyses are described in detail.