X-ray absorption near edge structure (XANES) has been applied to the elucidation of electronic structures in conduction-band region of SiO
x and SiN
x produced by ion implantation in Si (100). The XANES spectra of SiO
x at the Si2p edge are similar to those of SiO
2 but the spectral structure of intermidiate compound such as SiO is not observed. This fact suggests that the SiO
x layer consists of a mixture of Si and SiO
2 islands, and the conduction band of SiO
x is mainly composed of the orbitals of SiO
2. On the other hand, the XANES spectra at the Si2p edge of SiN
x gradually change depending on the x-values, and a sharp resonance corresponding to the N-dangling appears at the N1s edge for x>1.0. These observations suggest that SiN
x phase prefer randombonding structure rather than a mixture of Si and Si
3N
4 islands.
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