To investigate the possibility of the control over crystal growth on oriented organic film surfaces, bismuth (Bi) metal was vacuum-deposited on cadmium stearate Langmuir-Blodgett (LB) films with surfaces of either hydrophilic head groups or hydrophobic tail groups at room temperature. Interaction in both geometric and chemical senses between organic functional groups and evaporated metal seems critical for its growth. Different growth manner of Bi was observed on different surfaces in the initial stage of deposition ; A very low deposition rate, 0.01 nm/s, resulted in the large crystals grown on the hydrophilic surfaces, while fine particles formed on the hydrophobic surfaces. Time dependence of the average size of fine particles (∝t1/3) indicated high diffusivity of Bi adatoms on the hydrophobic surface, while crystallization of Bi on the hydrophilic surface possibly implied their strong chemical interactions.
We have investigated the dependence of the depth resolution of Auger depth profiles of InP/ GaInAsP multilayer specimens on the sputtering rate, and the surface roughness caused by the ion bombardment. Ar ions having energies of 1.0 and 3.0kV were used for the sputtering. The depth resolution of the measured Auger depth profiles was improved by increasing the sputtering rate. Thus we obtained, by 3.0kv Ar ion sputtering, excellent Auger depth profiles with constant depth resolution from the outermost surface of the samples. We found that the obtained depth resolutions of the trailing edge group were largely different from those of leading edges in several specimens. We also found that the resulting resolution of Auger depth profiles could be determined by the surface roughness caused by the Ar ion sputtering.