A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi
4Ti
3O
12 structure, a site-engineered concept, is proposed for Bi
4Ti
3O
12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e., (Bi, Nd)
4Ti
3O
12 was developed. A spontaneous polarization (
Ps) value was 58 μC/cm
2 beyond the single crystal data of Bi
4Ti
3O
12. In addition, taking account of the realizable orientation of the film on (100)Si substrate, the expected remanent polarization (
Pr) value of (Bi
3.5Nd
0.5)Ti
3O
12 film is almost the same with those of widely-used Pb(Zr
0.35Ti
0.65)O
3 films.
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