表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
28 巻 , 12 号
選択された号の論文の10件中1~10を表示しています
巻頭言
特集:埋もれたサブサーフェイス・界面を探る
  • 尾身 博雄, 川村 朋晃, 小林 慶裕, 藤川 誠司, 津坂 佳幸, 篭島 靖, 松井 純爾
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 678-681
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Grazing incident X-ray diffraction was observed from a thin silicon nano scale overlayer fabricated by oxidation and etch-back in a separation by implantation oxygen wafer at incident angles between 0.01o and 0.1o below the critical angle of total reflection (0.18o). We measured {220} reflections by probing the sample with respect to surface normal and found that the silicon nano scale overlayer has finite domains under strain close to the surface. We also found that annealing the sample up to 1000oC significantly reduced inhomogeneous strain and increased the size of the domains in the surface region of the silicon nano scale overlayer.
  • 山口 祥一, 田原 太平
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 682-687
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Novel interface-selective second-(χ(2)) and fourth-order (χ(4)) nonlinear spectroscopic techniques were developed to study liquid interfaces. χ(2) electronic sum frequency generation (ESFG) spectroscopy enabled us to obtain interfacial electronic spectra with an unprecedented high signal-to-noise ratio and dense wavelength data points, whereas frequency-domain χ(4) Raman spectroscopy provided vibrational spectra of solute molecules adsorbed at interfaces for the whole fingerprint region. Because these new even-order electronic and vibrational nonlinear spectroscopies utilize only visible and near-infrared laser pulses, they are applicable to the study of a variety of “buried” interfaces.
  • 田中 敬二, 川口 大輔, 高原 淳, 梶山 千里
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 688-697
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Surface and substrate interface of polymer blends are generally covered with one component to minimize the free energy of the system. Such a behavior is so-called “surface and interfacial segregation”. In this review, controlling factors for the segregation in polymer blends is discussed. Then, it is presented how surface and interfacial segregation can be regulated on the basis of the aforementioned factors.
  • 堀場 弘司
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 698-703
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Recently, hard X-ray photoemission spectroscopy using high-brilliance third-generation synchrotron radiation at SPring-8 is realized. Specially designed apparatus including X-ray optics achieves both high energy-resolution and high efficiency comparable with the soft X-ray photoemission spectroscopy. Large probing depth of about 10 nm enables us to probe intrinsic bulk electronic structure free from surface condition and electronic structure of deeply-buried layers. The importance and capability of this technique are demonstrated by the drastic difference in the Mn 2p core-level photoemission spectra of La1-xSrxMnO3 thin films that is obtained by using soft and hard X-rays.
  • 小野 寛太, 谷内 敏之, 尾嶋 正治, 脇田 高徳, 小嗣 真人, 鈴木 基寛, 河村 直己, 高垣 昌史, 秋永 広幸
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 704-710
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Photoelectron emission microscopy (PEEM) excited by hard X-ray photons has been extensively used in recent years by use of highly brilliant synchrotron radiation. In this article, we introduce principles, experimental setup, and some research topics of the hard X-ray PEEM. Especially, a visualization of buried interfacial nanostructures become possible in the use of hard X-ray PEEM, and the hard X-ray PEEM is thought to be a powerful tool for the investigation on surfaces and interfaces. We have also developed a nano-XAFS technique, that is, a microscopic XAFS measurement in 100 nm × 100 nm area using hard X-ray PEEM.
研究紹介
  • 佐野 陽之, 水谷 五郎
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 711-717
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    We have developed optical sum frequency (SF) and second harmonic (SH) microscopy as a new surface probe. In this paper, recent three studies performed by the SF (SH) microscopy are presented. (1) The spatial distribution of electronic states of an arsenic ion implanted Si(111) substrate was observed by using a wavelength tunable SH microscope. Resonant SH images associated with Eg and E2 energy gaps were obtained at the SH photon energies of 2.33 and 4.43 eV, respectively. (2) It was demonstrated that the spatial distribution of hydrogen desorption by laser pulses from a hydrogen terminated Si surface can be observed by the SH microscope. In the case of irradiation of ultraviolet short laser pulses, the hydrogen desorption occurred above the threshold fluence of ∼40 mJ/cm2, suggesting that the hydrogen desorption probably resulted from the laser induced thermal desorption (LITD) mechanism. (3) It was demonstrated that nondestructive chemical analysis of starch granules in a water plant can be performedby using SH and SF microscopy.
  • 石橋 幸治, 森山 悟士, 布施 智子, 河野 行雄, 山口 智弘
    原稿種別: 研究紹介
    2007 年 28 巻 12 号 p. 718-723
    発行日: 2007/12/10
    公開日: 2007/12/16
    ジャーナル フリー
    Single quantum dots (QDs) have been fabricated in an individual single-wall carbon nanotube (SWCNT) simply by depositing source-drain metal on it. The SWCNT between the contacts behaved as a single QD. The single electron transport measurements have been carried out in a dilution refrigerator, which revealed unique artificial atom behavior. Those include clear observation of quantized energy states and their Zeeman splitting in magnetic fields, two or four electron shell structures, and quantum states of an interacting two-electron system. The above characteristics are well modeled by electrons confined in a one-dimensional hard wall potential. The unique features in the SWCNT artificial atom, as compared with semiconductor artificial atoms, are, first, that the single electron charging energy and the quantized level spacing are larger by more than an order, and, second that the simple shell structures are observable even with many electrons in the dot. To demonstrate the larger energy scales for the artificial atom, the teraherz (THz) photon assisted tunneling is presented.
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