We have investigated the effects of dopants (Ti, Zr, H, Sn) and growth processes for In
2O
3 transparent oxide films in terms of their electrical and optical properties. Ti- and Zr-doped In
2O
3 showed higher mobility than conventional Sn-doped In
2O
3 in epitaxial and polycrystalline films fabricated by vapor-phase-crystal growth. On the other hand, we have found that polycrystalline H-doped In
2O
3 films fabricated by crystallization of the amorphous phase at 200
oC show larger mobility (130 cm
2/Vs) with resistivity of 2.7×10
−4 Ωcm and improved near infrared transparency. Analysis of temperature dependence of Hall mobility reveals that the high mobility in the H-doped In
2O
3 films is ascribable to suppression of multicharged and neutral impurities as well as grain boundary defects. Relationship between the values of room temperature Hall mobility and carrier concentration further supports our conclusion.
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