表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
29 巻 , 8 号
選択された号の論文の16件中1~16を表示しています
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第27回表面科学講演大会論文特集 [II]
論文
  • 熊谷 崇, 八田 振一郎, 奥山 弘, 有賀 哲也
    原稿種別: 論文
    2008 年 29 巻 8 号 p. 484-488
    発行日: 2008/08/10
    公開日: 2008/08/22
    ジャーナル フリー
    The authors studied the isolated water molecules and hydroxyl species on Cu(110) using a low-temperature scanning tunneling microscope (STM). A water molecule adsorbs on top of Cu atom and thermally hops along the atomic row at 6 K. The migration is also induced by STM via the excitation of molecule-substrate vibration. An isolated hydroxyl species, produced by dissociating a water molecule with the STM, adsorbs at the short-bridge site with its axis inclined along [001]. The orientation was found to be dynamically flipped, wherein substantial isotope effect was observed in the rate.
  • 成田 あゆみ, 馬場 祐治, 関口 哲弘, 下山 巖, 本田 充紀, 平尾 法恵, 矢板 毅
    原稿種別: 論文
    2008 年 29 巻 8 号 p. 489-494
    発行日: 2008/06/06
    公開日: 2008/08/22
    ジャーナル フリー
    We have investigated the formation of molecular ions and neutral molecules from adsorbed CH4, CD4 and N2 following 1 keV He+ ion irradiation. The thickness of the adsorbed layer was precisely controlled. For mono-layered methane, only monomer ions (CHx+) were desorbed, while a large number of heavy ions (CnHx+) up to n = 20 as well as heavy neutral molecules (CnHx) were desorbed from multi-layered film. Among the desorbed ions and neutral molecules, molecules with C-C covalent bonds such as acetylene and ethylene were found, which indicates that chemical bonds are newly formed by ion irradiation. Based on the results for thickness dependences of the mass spectra and calculation of He+ energy loss process from TRIM-Code, it was elucidated that the monomer ions are desorbed from the top surface layer through single electron excitation. On the other hand, the cluster ions are formed mainly in the inside of the layers along the nuclear track due to phonon excitation, which is produced by nuclear collision between incident He+ ions and adsorbed molecules.
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研究紹介
  • 松本 健俊, アスハ, 今村 健太郎, 小林 光
    原稿種別: 研究紹介
    2008 年 29 巻 8 号 p. 498-502
    発行日: 2008/08/10
    公開日: 2008/08/22
    ジャーナル フリー
    Formation of thin gate insulators with high electrical characteristics is a key technology to achieve high performance of semiconductor devices in the next generation. As for thin film transistors (TFTs) used in liquid crystal displays (LCDs), a new low temperature gate oxide formation technique is required to provide homogeneous gate insulators on rough poly-Si surfaces with substrate glass. We have developed two different methods for nitric acid oxidation of Si (NAOS) at 120oC: i) one-step NAOS using azeotropic nitric acid solutions (68wt%) to form ultrathin (i.e., ∼1 nm) SiO2 layers with an extremely low leakage current density, and ii) two-step NAOS using ∼40 and 68wt% nitric acid solution to form thick (i.e., ≥ 10 nm) SiO2 layers. A progress in the NAOS techniques is outlined in this report.
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