表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
3 巻 , 1 号
選択された号の論文の5件中1~5を表示しています
  • 松本 修
    1982 年 3 巻 1 号 p. 2-10
    発行日: 1982/03/01
    公開日: 2009/11/11
    ジャーナル フリー
    For understanding chemical process in the interaction between a plasma and a solid surface, the formation and reaction of the plasma state is studied. The plasma state was identified by the emission and mass spectroscopies and the electrical probe techniques.
    The Nitriding of metals, such as titanium, steel and silicon, with nitrogen and nitrogen-hydrogen plasmas was discussed as an example. The main species observed in the nitrogen plasma were nitrogen molecules and molecular ions in excited states. By the addition of hydrogen into the nitrogen plasma, nitrogen-hydrogen molecules were formed. In every case. the nitriding reaction was considerably exchanged by the addition of hydrogen. The effect of the addition of hydrogen is briefly discussed.
  • 瀬尾 眞浩, 佐藤 教男
    1982 年 3 巻 1 号 p. 11-16
    発行日: 1982/03/01
    公開日: 2009/11/11
    ジャーナル フリー
    Fe-30 Ni alloy samples were oxidized for 10 to 240 minutes at 433 to 473K under a pure oxygen pressure of 1.33×104Pa. The thickness of oxide films was measured by a multiple-angle incidence ellipsometer. The kinetics of film growth was found to obey a parabolic rate law. The depth-profiling of oxidized surfaces, performed with simultaneous use of Auger electron spectroscopy (AES) and argon ion sputter-etching technique, reveals that the iron component is preferentially oxidized, producing a nickel-enrichment zone in the alloy side of the film/alloy interface.
    As the oxidation time or the oxidation temperature increases, the nickel-enrichment zone tickens, whereas the concentration gradient in the nickel-enrichment zone decreases. During oxidation of the alloy, the rate of transport of iron component in the film was almost equal to the interdiffusion rate in the substrate alloy, indicating a steady-state. The apparent value of interdiffusion coefficient, D estimated at the steady-state is 7.3×10-16cm2·s-1 at 473K, which is more than ten orders of magnitude higher than the value extrapolated from the lattice-diffusion data obtained at high temperature. The large value of D may be explained in terms of the divacancy-enhanced lattice diffusion mechanism rather than the grain boundary diffusion mechanism.
  • 佐々木 貞吉, 曽我 猛
    1982 年 3 巻 1 号 p. 17-26
    発行日: 1982/03/01
    公開日: 2009/11/11
    ジャーナル フリー
    The electronic structure of stoichiometric hydrides TiH2, VH2, ZrH2, and NbH2 with fluorite struture has been calculated using the discrete variational (DV) -Xα method. Clusters studied were [Me6H8] n+ (Me : metal, n=2.6 to 4.0) and [Me4H8]. Although the level structures obtained for the [Me6H8] n+ clusters are generally in accordance with those by previous band calculations, the results are inconsistent with UPS spectra for the Me-H system. On the other hand, Me-H bonding levels for the [Me4H8] cluster are located over 4 to 8eV relative to the Fermi level EF, in good agreement with UPS and X-ray emission measurements. These levels are composed mainly of Me d, p+H1s (4 to 6eV) and Me s, p+H1s (5 to 8eV) hybridizations. The charge states are + (1.3±0.1) for Me and - (0.65±0.05) for H atoms, respectively. The valence band in XPS spectra of the dihydrides are also demonstrated. Applicability of XPS to the investigation on bonding states of the Me-H systems is discussed.
  • 遠藤 伸裕, 牟田 弘樹
    1982 年 3 巻 1 号 p. 27-33
    発行日: 1982/03/01
    公開日: 2009/11/11
    ジャーナル フリー
    Fine pattern lithography and dry etching technology are key processes for manufacturing higher density integrated circuits. A brief review of both technologies was presented, showing individual problems. Electron-beam direct writing is shown to be a useful step for submicron pattern technology. Utilization of multi-level resist structures can solve most problems, such as the proximity effect.
  • 大鉢 忠
    1982 年 3 巻 1 号 p. 34-39
    発行日: 1982/03/01
    公開日: 2009/11/11
    ジャーナル フリー
    Experimental observation of the equilibrium and kinetic roughening transitions of α-Ag2S is shown. The equilibrium transition temperatures for {110} and {100} are 530°C and 480°C respectively. This special growth system with solid/vapor (or liquid) reaction is only applicable to systems of electronic and ionic mixed superionic conductors such as α-Ag2S. Previous experimental research on the roughening transition was reviewed.
    The condensation of sulphur vapor to {110} faces of an α-Ag2S crystal is also shown. Thin film shows the change of color due to interference of the changing film thickness. Thin film is different from thick film which has bulk liquid properties.
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