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Volume 5 (1984)
- Issue 4 Pages 392-
- Issue 3 Pages 298-
- Issue 2 Pages 96-
- Issue 1 Pages 2-
- Issue Special Pages 1･･･
Volume 5, Issue 3
Displaying 1-10 of 10 articles from this issue
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Osamu RYUZAN1984 Volume 5 Issue 3 Pages 298-307
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSMBE is no longer a crystal growth technique in laboratories but has recently become a common production technology. GaAs devices, especially HEMT etc. have played an important role in making MBE technique thus popular. The progress of MBE technique also caused the progress of academic research in crystal growth and surface physics. In this paper, a couple of topics of the researches and developments of MBE is described. The present status of the device applications of it is also discussed.View full abstractDownload PDF (3467K) -
Yoshizo INOMATA1984 Volume 5 Issue 3 Pages 308-312
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSA free energy theory of material transport is proposed to explain the transport process controlled by diffusion in the system where the continuity of geometrical potential gradient is not realized. According to the theory, the rate of material transport of component x, (dmx/dt) is expressed as follows, under the condition, local electric neutrality being preserved. (dmx/dt) =Cx·Dx (ax/λx) {1-exp (ΔG/RT)} Where, Cx is the concentration of x, Dx effective self-diffusion coefficient of x, ax effective area for the diffusion, λx effective length of the diffusion path, ΔG excess energy relaxed by the material transport remarked, R gas constant and T absolute temperature. The direction of the transport is given by the background of ΔG.
The relation between present proposal and Fick's law, and the derivation of theoretical rate equation of tarnishing reaction were shown to illustrate the theory. The transport process for sintering and for diffusional creep is also explained by the theory.View full abstractDownload PDF (863K) -
Evaluation through MOS Diode CharacteristicsToshiroh KARAKI1984 Volume 5 Issue 3 Pages 313-320
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSThe relationship between impurities remaining on polished substrate surfaces and device characteristics was investigated with respect to Si substrates. MOS diodes were produced on mechanochemically polished Si substrates and mobile ions having influences on the electrical characteristics of the diodes were quantitatively determined. The results indicated that the Na+ ions exert such an influence. The source introducing Na+ ions onto the polished surface was determined and more effective mechanochemical polishing condition are proposed.View full abstractDownload PDF (5453K) -
Koichi KANAYA1984 Volume 5 Issue 3 Pages 321-331
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSA digital processing method with the aid of a scanning densitometer system for image analysis of electron micrographs was successfully applied to biological specimens as well as thin films.
Based on Fourier techniques for structural analysis from a computer-generated diffractogram, some of the known structural features were confirmed, but other unknown details were established from a superposition of individual harmonic images, where the enhanced scattering amplitude and corrected phase are inversely transformed from the selected diffraction patterns.
The noise removal and image enhancement are most serious problems for a digital structural analysis.
From the digital processed data when the noise removal and in addition, the image enhancement are preliminarily processed, a Fourier synthesis representing the precise location and subsequent three-dimensional arrangement of atoms or molecules is derived.View full abstractDownload PDF (19024K) -
-Mechanism of SMSI and Its Effect upon Catalysis-Toshio UCHIJIMA, Kimio KUNIMORI1984 Volume 5 Issue 3 Pages 332-341
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSSince 1978, TiO2-supported noble metals and related catalysts have been studied extensively in relation to SMSI (Strong Metal-Support Interaction). Initially, so-called “pill-box” structure model was proposed for SMSI, and widely accepted. This model stated that Pt hemisphere particle changes its morphology into thin pill-box, accompanied with direct chemical bond between Pt and Ti+3 as a result of a partial reduction of TiO2 during high temperature H2 reduction. However, a recently proposed alternative model, i.e., “migration” model, has been replacing the above one. In the “migration” model, suboxide, TiOx, produced by reduction of support covers the metal surface, which is responsible for severe suppression of H2 and CO chemisorption.
Many works have been done on the effect of SMSI upon such catalysis as hydrogenolysis, hydrogenation and dehydrogenation of hydrocarbons and CO hydrogenation, and discussed in relation to SMSI mechanism.View full abstractDownload PDF (1975K) -
Minoru SASAKI, Tatsuya YASUNAGA1984 Volume 5 Issue 3 Pages 342-350
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSNew Techniques are described for determining dynamic properties on fast reactions in hetero-geneous systems; solid-liquid, gas-liquid, and gas-solid interfaces. Various kinds of relaxations were observed by these techniques and the detailed mechanisms on proton adsorption-desorption, counter-ion formation reaction, specific adsorption, and intercalation-deintercalation of alkali metal ions at solid-solution interface, surfactant adsorption-desorption and complex formation reaction at gas-solution interface and coadsorption-desorption of methanol in channel of H-ZSM-5, were clarified.View full abstractDownload PDF (3666K) -
Hiroyoshi SOEZIMA1984 Volume 5 Issue 3 Pages 351-363
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSThe depth resolutions by the Auger electron spectroscopy and the X-ray photoelectron spectroscopy are reviewed. The analytical depth is determined by the following 3 factors. (1) The first is the penetration depth of the incident primary electron or the incident soft X-ray. (2) The second is the ionization cross-section by which the yields of the Auger electrons or the photo-electrons are determined. (3) The last is the electron escape depth itself.
The penetration depth and the ionization cross-section varies about 10% at the most inside the range of the electron escape depth. The electron escape depth has the value of 5-20A in the energy range of 10-1, 500eV. When the composition is not uniform in the range of 5-20A from the top most surface, the composition determination becomes difficult due to the differences of the electron mean free paths of the Auger electrons and/or the photoelectrons from the component materials.View full abstractDownload PDF (2395K) -
Kimio INAOKA, Kiyotaka SATO1984 Volume 5 Issue 3 Pages 364-366
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSDownload PDF (2368K) -
Nobuyoshi BABA1984 Volume 5 Issue 3 Pages 367-369
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSDownload PDF (2272K) -
Tomoji KAWAI, Shichio KAWAI1984 Volume 5 Issue 3 Pages 370-371
Published: September 01, 1984
Released on J-STAGE: November 11, 2009
JOURNAL FREE ACCESSDownload PDF (490K)
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