表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
8 巻 , 3 号
選択された号の論文の13件中1~13を表示しています
  • 藤原 純, 吉原 一紘, 新居 和嘉
    1987 年 8 巻 3 号 p. 148-152
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    The change of the surface compositions of oxides by electron beam irradiation during Auger electron spectroscopy (AES) measurement was studied. The surface compositions of the oxides were much affected by the irradiation of an electron beam. By the irradiation of an electron beam, the oxides were dissociated and the metallic components were enriched on the surfaces. The main factor affecting the change of surface compositions was found to be the electron beam current density. The effect of the electron beam current density on the dissociation velocity were studied and the conditions to minimize the dissociation of the ceramic oxides during AES measurment were proposed.
  • 浅野 清光
    1987 年 8 巻 3 号 p. 153-157
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Oxidation properties of the Au, Ag, Cu/CdTe (110) systems at room temperature have been studied by electron-energy loss spectroscopy (EELS) and Auger electron spectroscopy (AES). No adsorption of oxygen was observed when the clean ordered CdTe (110) -1×1 surface was exposed to unexcited oxygen. However only Au atoms among the three noble metals deposited on the CdTe(110) substrate at room temperature have a catalytic action for oxidizing CdTe. On the basis of electronegativity differences between noble metal and substrate atoms, an oxidation model enhanced by the adatoms on the CdTe(110) surface has been proposed. Exposure of the CdTe(110) surface covered by the Au layers thicker than about 10Å to unexcited oxygen induces the formation of the homogeneous bulk-like oxide layers of TeO2 on the top of the substrate at room temperature.
  • 荒川 富行, 島岡 五朗
    1987 年 8 巻 3 号 p. 158-163
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    ZnO thin films prepared on various cubic substrates, such as Si, GaAs, GaP, ZnS, CdTe, MgO, NaCl and KCl, by reactive rf sputtering were investigated by using RHEED, TED and TEM. It was found that the crystallinity and epitaxy of ZnO films on (111) A cation faces were better than those on (111) B anion faces. ZnO films on (110) and (100) faces, consisting of both cations and anions showed characteristic crystallographic orientations and surface morphologies. ZnO films on the substrates such as ZnS and CdTe, having about the same ionic character as ZnO, showed epitaxial growth. However those on the substrates such as Si and NaCl, having different ionic character from ZnO, showed poor epitaxy. These results indicate that the ionic characteristics play very important roles in the epitaxial growth of ZnO thin films.
  • 鈴木 佳子, 畑中 義式, 島岡 五朗
    1987 年 8 巻 3 号 p. 164-168
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Oxidized films of hydrogenated amorphous silicon and crystalline silicon, formed anodically and cathodically in plasma process, were studied by XPS. The thickness of the cathodic oxide layer was less than a few nanometers, irrespective of oxidation time, and the oxides included some suboxides such as SiOx (x<2). Contrary to these, the thickness of the anodic oxide layer increased with increasing oxidation time and the oxide did not include any suboxide. A MIS type cell with such an anodically oxidized a-Si: H film showed good characteristics in both photocurrent and dark current.
  • 金崎 英二
    1987 年 8 巻 3 号 p. 169-174
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    The photoacoustic spectra (PA spectra) of Rhodamine B dye adsorbed on silica particles (Rh B/ SiO2) have been measured in the wavelength region of 300-700nm. The spectral shape resembles the absorption spectrum of Rh B aqueous dilute solution although less than 9nm shifts of maxima to the high energy side are observed in the PA spectra. This similarity suggests that Rh B molecules on silica particles are as highly dispersed as those in the solution. The reasons for a slight difference in band shape are considered between the PA spectrum and the diffuse reflection spectrum of Rh B/ SiO2. When the modulation frequency of light for excitation is increased some unknown species being adsorbed very near to the surface of silica particles are detected in the PA spectra in the wavelength region of 600-700nm. The ratio of the PA signal height at the maximum of Rh B (λ=545nm) to that at the surfactant's band above (λ=700nm) is plotted vs. the thermal diffusion length. This analysis indicates that Rh B dye molecules are distributed within the depth of 64μm from the surface of silica particles.
  • 曽我 眞守, 下間 亘, 森本 和久
    1987 年 8 巻 3 号 p. 175-178
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    An electron-microscopic investigation of an electrochemically polymerized poly (3-methylthienylene) (P3MT) film has been carried out in order to elucidate the cause for the electrical anisotropy of the film.
    The SEM observation revealed that the film is composed of fibrils of about 50nm in diameter, but, no regular features were seen in their morphology.
  • 小島 猛, 太田 公広, 中川 格
    1987 年 8 巻 3 号 p. 179-185
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Intensity oscillations of reflection high-energy electron diffraction (RHEED) spots, initiated by As incorporation, have been observed for both Ga and Al accumulated layers on GaAs (001) surfaces. Dependences of reconstruction patterns on the As pressure and the substrate temperature have been studied. Applications of this phenomena to a vapor pressure monitor and to crystal growth are also discussed.
  • 小林 久芳, 山口 克, 田中 庸裕, 西村 靖雄, 川上 博史, 吉田 郷弘
    1987 年 8 巻 3 号 p. 186-191
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Geometrical structures of vanadium oxide and niobium oxide clusters supported on silica and alumina are investigated by means of ab initio molecular orbital method. Optimized geometries are searched using the energy gradient technique. For the clusters supported on silica and alumina, mono-oxo and di-oxo structures are more stable respectively. Stabilization of the di-oxo structure is ascribed to the bond formation between the oxygen and aluminum atoms in the cluster. Bond lengths estimated by the above calculations are 1.56Å (1.77A) and 1.58Å (1.95Å) for V-O double (single) bond on silica and alumina, respectively, and 1.72Å (1.92Å) and 1.73Å (2.11Å) were obtained for Nb-O double (single) bond. Calculated values are compared with available data from EXAFS measurements, and good agreement, as a whole, is given for the systems examined here.
  • 林 精一, 星 一以, 小倉 〓
    1987 年 8 巻 3 号 p. 192-196
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Thin Ag films of (001), (110) and (111) orientations were vacuum deposited on NaCl substrates below room temperature in inert gas atmospheres of about 1Pa. The substrates used were cleaved NaCl crystals and NaCl thin layers deposited onto hot mica and then cooled. Pentagonal particles are frequently observed in those Ag films. Film growth mechanism, especially graphoepitaxy of (110) film, is explained on the basis of a tetrahedral cluster nucleation model, in which promoted migration of Ag adatoms and clusters on the substrate is also considerd.
  • 関根 哲, 佐藤 智重, 長沢 勇二, 境 悠治
    1987 年 8 巻 3 号 p. 197-202
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Scanning Auger microprobe (SAM) images provide information on the elemental distribution of specimen sdurfaces, but the data are influenced by specimen topography. To climinate this effect, the peak to background ratio, (P-B)/B(=R), is often used instead of the net peak intensity, P-B. It was found that these mothods would provide reasonable quantitative results when the tilting angle of the facet plane against the primary electron beam incidence is less than approx. 50 degrees. Over 50 deg., the R would generally give higher values, and at 80 deg., the value is 1.23.7 times larger than that at 0 deg. We propose a new method to compensate for this deviation. Through spcimen tilting experiments, we found a deformation in total background shape at high tilting angles. It is interpreted by γ, a background intensity ratio at two energies (ex. 2000 eV and 3000 eV). Since, γ obeys a simple equation of tilt angle θ,
    γ(θ)=7×10-5θ2-2.92×10-3θ+1
    Then the θ can be derived the background intensity values. The following relationship was also found between R0 and Rθ
    R0=Rθ/[(1.47×10-3E+0.06) exp {6.1 × 10-4(θ-45)2} + 1]
    where R0 and Rθ are peak to background ratios at 0 and θ deg., respectively, and E is the Auger transition energy. Since θ can known, we can always get the peak to background ratio values converted to the horizontal state. Elimination of topographic effect would thus be possible.
    We believe that this scheme would contribute to quantitative Auger imaging.
  • 小島 猛, 太田 公広, 高安 一朗, 湊 哲男, 川島 光郎
    1987 年 8 巻 3 号 p. 203-209
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    Surface diffusion of Ge atoms toward the [110] azimuth on the Ge (001) surface, grown by a molecular beam epitaxy, was measured by a method of the reflection high-energy electron diffraction (RHEED) and by intensity oscillations from the vicinal sucfares, an activation energy of 1.9eV was obtained. Influences of cleanliness and flatness of the surfaces on the RHEED patterns and intensity oscillations were also discussed.
  • 岡野 一雄, 高橋 昭男
    1987 年 8 巻 3 号 p. 210-215
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    In order to apply a sintered silicon carbide to electronic devices, the relationship between sintering condition and electrical properties was investigated. High-β-phase silicon carbide was sintered at varios temperatures between 1650°C and 2150°C for 0.5hr in a vacuum furnace. The dc conductivity, ac conductivity and I-V characteristic were measured for each sample.
    The electrical conductivity of samples sintered below 2040°C was several times as high as that of samples sintered above 2050°C. The silicon carbides sintered above 2050°C showed remarkable frequency dependence of conductivity and non-linear I-V characteristics, whereas the samples sintered at below 2040°C showed slight frequency dependence of conductivity and was of ohmic conduction.
    In order to explain the experimental results, an energy band model was proposed, and electrical conduction mechanism was discussed based on the model.
  • 浅野 清光, 斉藤 健治, 光延 信二, 小島 融三, 土佐 正弘, 吉原 一紘
    1987 年 8 巻 3 号 p. 216-218
    発行日: 1987/06/20
    公開日: 2009/11/11
    ジャーナル フリー
    X-ray photoelectron spectroscopy and Auger electron spectroscopy have been used to study the oxygen depth profile of niobium surfaces which were treated by typical procedures used in the preparation of superconducting rf cavities. The outermost layer of the niobium surface consisted of Nb2O5 and NbO2. However, it was found that the homogeneous oxide layers of Nb2O5 formed on the niobium surface by anodic oxidation were decomposed into NbO 60%, NbO2 30% and Nb2O5 10% due to the preferential sputtering of oxygen from Nb2O5.
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