The present author have deen developed a new type ion source for vacuum sputtering which includes an electrostatic deflector. The ions emitted from the ion source are deflected by a set of deflecting electrodes, one of these is at the anode potential and the other at accelerating potentiál.
The ion beam has been used to sputter conducting and insulating target materials. From these experimental result it is found that the deposition rate of a given material is approximately proportional to the primary ion current for given accelerating voltage. Typical rate of deposition of nickel film at distance of 7 cm from the target with a 500 μA, 5KV ion beam of 3 mm diam is 40 Å/min.
As a practical application of the method, the nickel 40%-copper 54% alloy film for strain gauge was deposited by the two separate ion gun simultaneously. The content of these chemical composition was regulated by the primary ion beam current.
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