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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 15, Issue 11
Displaying 1-3 of 3 articles from this issue
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  • Flexible Channel Electron Multiplier
    Tomonao HAYASHI, Masashi HASHIMOTO
    1972 Volume 15 Issue 11 Pages 390-396
    Published: November 20, 1972
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.15.390
    JOURNAL FREE ACCESS
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  • Study of the Formation Process of MnBi Thin Films by the Measurement of Electrical Resistivity and X-ray Diffraction
    Uichiro MIZUTANI, Yoshiro IWAMA
    1972 Volume 15 Issue 11 Pages 397-401
    Published: November 20, 1972
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.15.397
    JOURNAL FREE ACCESS
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    MnBi thin films are prepared by a successive deposition of Bi and Mn layers with a subsequent annealing. It is proved that a marked decrease in electrical resistivity measured during the annealineg corresponds to the formation of MnBi compound. Therefore, the measurement of electrical resistivity is useful to monitor the formation of MnBi compound. In addition, it is found that the exposure of the sample to air before annealing disturbs the formation of a good quality film. In this case, a marked decrease in resistivity is no longer observed.
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  • Reactive Sputtering with Sublimated Vapours in a Nichrome Furnace
    Hiroharu HIRABAYASHI, Minoru NOGAMI
    1972 Volume 15 Issue 11 Pages 402-408
    Published: November 20, 1972
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.15.402
    JOURNAL FREE ACCESS
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    In the sublimated atmosphere of sulphur and selenium, nearly stoichiometric thin films of CdS, and CdSe are prepared by reactive sputtering method. Their properties depend remarkably on sputtering conditions, that is, sputtering rate, sublimation temperature and Ar gas pressure, etc.
    The values of dark resistivity and photosensitivity of the CdS films sputtered in sulphur vapour at 100°C are about 1010Ω-cm, and 5×103, respectively, and the dark resistivity 109Ω -cm and photosensitivity of 104 are obtained in the CdSe films deposited in selenium vapour at 125°C. This reactive sputtering method seems to be very suitable for preparing the stoichiometric thin films of binary compound semiconductor, one of whose constituent is very sublimating.
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