巻号一覧
15 巻, 11 号
選択された号の論文の3件中1～3を表示しています
- |<
- <
- 1
- >
- >|
-
林 友直, 橋本 正之1972 年 15 巻 11 号 p. 390-396
発行日: 1972/11/20
公開日: 2009/09/29
ジャーナル フリーPDF形式でダウンロード (931K) -
水谷 宇一郎, 岩間 義郎1972 年 15 巻 11 号 p. 397-401
発行日: 1972/11/20
公開日: 2009/09/29
ジャーナル フリーMnBi thin films are prepared by a successive deposition of Bi and Mn layers with a subsequent annealing. It is proved that a marked decrease in electrical resistivity measured during the annealineg corresponds to the formation of MnBi compound. Therefore, the measurement of electrical resistivity is useful to monitor the formation of MnBi compound. In addition, it is found that the exposure of the sample to air before annealing disturbs the formation of a good quality film. In this case, a marked decrease in resistivity is no longer observed.抄録全体を表示PDF形式でダウンロード (880K) -
平林 紘治, 野上 稔1972 年 15 巻 11 号 p. 402-408
発行日: 1972/11/20
公開日: 2009/09/29
ジャーナル フリーIn the sublimated atmosphere of sulphur and selenium, nearly stoichiometric thin films of CdS, and CdSe are prepared by reactive sputtering method. Their properties depend remarkably on sputtering conditions, that is, sputtering rate, sublimation temperature and Ar gas pressure, etc.
The values of dark resistivity and photosensitivity of the CdS films sputtered in sulphur vapour at 100°C are about 1010Ω-cm, and 5×103, respectively, and the dark resistivity 109Ω -cm and photosensitivity of 104 are obtained in the CdSe films deposited in selenium vapour at 125°C. This reactive sputtering method seems to be very suitable for preparing the stoichiometric thin films of binary compound semiconductor, one of whose constituent is very sublimating.抄録全体を表示PDF形式でダウンロード (898K)
- |<
- <
- 1
- >
- >|