巻号一覧
15 巻, 6 号
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真下 正夫1972 年 15 巻 6 号 p. 196-204
発行日: 1972/06/20
公開日: 2009/09/29
ジャーナル フリーPDF形式でダウンロード (2836K) -
北田 正弘, 鴨下 源一1972 年 15 巻 6 号 p. 205-213
発行日: 1972/06/20
公開日: 2009/09/29
ジャーナル フリーCrystallography of CdS films evaporated in a vacuum was investigated. The results are as follows :
(1) The crystal structures of CdS films onto a cleaved NaCl crystal are dependent upon the substrate temperature and thickness of the CdS films. The critical temperature, at which the crystal structure of the CdS film of about 3000Å in thickness changes from hexagonal to cubic type, is about 340°C. Even in case of a higher substrate temperature than 340°C, a thinner CdS film has the hexagonal type, which changes from hexagonal to cubic type with increasing the film thickness.
(2) The crystal structure of a CdS film evaporated onto a noncrystalline carbon is a hexagonal type and the film is composed of fine crystal grains.
(3) Twin and dislocation were observed in both cubic and hexagonal CdS. The crystallographic relations between CdS films and NaCl (100) substrate are (100) Nacl// (100) CdS and <100>Nacl//<100>CdS for the cubic structure, (100) Nacl // (0001) CdS and <110>NaCl//<100>NaCl//<100>CdS for the cubic structure, (100) Nacl// (0001) Cds and <110>Nacl//<1100>CdS, and (100) Nacl // (0001) CdS and <110>Nacl//<1120>CdS for the hexagonal struc ture, the former is a epitaxial growth, and the latter is a textural growth.
(4) An activation energy of the grain growth of hexagonal CdS evaporated onto the noncrystalline carbon is 5.5 to 6.1 kcal/mol.
(5) Dislocation loops were observed in a nitrogen-ion implanted CdS film.抄録全体を表示PDF形式でダウンロード (3725K) -
伊藤 昭夫, 三沢 俊司1972 年 15 巻 6 号 p. 214-221
発行日: 1972/06/20
公開日: 2009/09/29
ジャーナル フリーThin films of various composition, AlNX, have been prepared by reactive r. f sputtering using Davides type electrode. Specimens of a series of composition, x=01.0, could be obtained by changing the nitrogen partial pressure with sputtering voltage. Film composition was determined by means of an X-ray microanalyser. The resistivity and the temperature coefficient of resistance, T. C. R., were observed as functions of x for the low composition films, x = 00.7. Dielectric characteristics and optical absorption spectra in both visible and infrared regions were observed for colourless and transparent AlN dielectric films. Dielectric constant (ε/ε0) of 8.08.5 and dissipation factor (tanδ) of 5× 10-3 at 1 kHz were relatively coincident with other data. Structure of films were observed by an electron transmission diffraction pattern, which exhibited hexagonal wurtzite structure. Suitability of this method for the preparation of dielectic films for electronic devices was discussed.抄録全体を表示PDF形式でダウンロード (1125K)
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