Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 16, Issue 3
Displaying 1-4 of 4 articles from this issue
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  • Molecular Beam Epitaxy
    Izuo HAYASHI
    1973 Volume 16 Issue 3 Pages 91-95
    Published: March 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.91
    JOURNAL FREE ACCESS
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  • Influence of Residual Gas on the Process of Film Growth
    Yoshikatsu NAMBA, Toshio MORI
    1973 Volume 16 Issue 3 Pages 96-102
    Published: March 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.96
    JOURNAL FREE ACCESS
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    Influence of residual gas during the process of film growth has been studied by means of observation of the cross-sectional structure of the film. It has been shown that, as the vapor pressure of residual gas increases, the crystal grain boundary appears along the direction of film growth and finally it changes into the void. To make clear these results, measurement of electrical conduction and X-ray diffraction analysis in comparison with the cross-sectional structure have also been made. Finally, for the change in cross-sectional structure, phenomenological treatment of mass transfer based on the surface diffusion and deposition of atoms has also been made. It shows that these treatment agree well with the experimental results.
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  • Alloy Sputtering from Composite Target
    Kiyotake NARAOKA, Osamu KASAHARA
    1973 Volume 16 Issue 3 Pages 103-107
    Published: March 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.103
    JOURNAL FREE ACCESS
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    Mo-Ti alloy is sputtered from a Mo target on which is placed Ti ribbon. The uniformity of Ti concentration is affected by the target voltage. When the composite target is sputtered at 300 volts, alloy film deposits with uniform Ti distribution. But at higher target voltage over 1000 volts, the sputtered film has a maximum Ti content at the place just opposite to a Ti ribbon. The alloy films deposited on the substrate heated at 420°C have a body centered cubic structure, and the lattice parameter calculated from (110) X-ray diffraction angle are about 1% larger than bulk alloy. Compared with Mo and Ti, the alloy films have stronger chemical resistance. They are not dissolved by hydrochloric acid and hydrofluoric acid, and more slowly dissolved by nitric acid than Mo.
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  • On the Hg-Drag Effect and the Sensitivities of Ion Gauge for Various Gases
    Atsuhiro SAKIYAMA, Shigenobu OKADA, Isao KUSUNOKI, Kumasaburo KODERA
    1973 Volume 16 Issue 3 Pages 108-110
    Published: March 20, 1973
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.16.108
    JOURNAL FREE ACCESS
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    The measurement was made of the sensitivities of ion gauge to the rare gases, H2, N2 and CO. A McLeod gauge was used as the standard, and the Hg-drag effect was examined quantitatively with the theoretical formula proposed by Takaishi et al. It was confirmed that the Hg-drag effect could be eliminated when the cut-off position of the McLeod gauge was cooled with dry ice. It was also confirmed that the plot of relative sensitivity vs total number of electrons per molecule gave a linear relationship, which had been found by Found and Dushman. The gradient of this linear plot was somewhat lower than that of Dushman and Young when considering the Hg-drag effect.
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