ESR measurements have been used to monitor radiation damage in ion-implanted silicon. When the Ar implantation dose is more than about 10 times the critical one for amorphization, both an amorphous center with g = 2.0055 and another new ESR center with g = 2.0029 can be observed. An investigation of heavily argon implanted layers in silicon was characteristically carried out using ESR and ESCA, and was structurally studied using transmission electron microscopy. It is found that the new ESR center in heavily implanted layers is due to amorphous SiC.

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The electrical properties of vacuum-deposited titanium thin films on the glass substrate are studied experimentally in relation to some physical conditions of deposition.
When the evaporation of titanium and deposition of the film on the substrate is held under the conditions in which the atmosphere has a pressure less than 5 × 10^-8 Torr and the substrate is intentionally not heated, the resistivity of the films is converged into a constant value of nearly 90 μΩ-cm independent of the sort of atmosphere gases, which value is about twice as large as that of the bulk titanium metal.
As the pressure of the gas introduced to the vacuum chamber during deposition is increased, the resistivity of the produced films also increases in the case of oxygen, nitrogen and air; however, it shows almost no increase in the case of argon until it's pressure reach 5 × 10^-5 Torr.
When the substrate temperature during deposition is increased, the resistivity of the produced film reveals indistinct minimum value in the gently sloping change at about 230°C temperature and it's temperature coefficient becomes maximum at the same temperature.
A temperature characteristic of resistance of ultra-high vacuum deposited film at 400°C temperature substrate shows reversible variation by the heat-treatment in vacuum; however, that of the deposited film on the substrate which is not heated shows a small irreversible one. The poorer the vacuum during the deposition is, the more remarkable is the degree of irreversibility, and the irreversible change is interpreted by the crystallization of the films during heating.
The relation between the resistivities of the above described films and their temperature coefficients shows a small deviation from the Matthiessen's law in a fine straight line. This deviation will be interpreted by the island or grain structure of the thin film and by the gas adsorption on the grain boundary.

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Electrical properties of amorphous carbon-metal interface have been investigated extensively. The films were fabricated by the arc deposition, r.f. sputtering and carbonization of resins. Several nonlinear effects such as memory-switching and varistor-like characteristics were observed in amorphous carbon films sandwiched by metal electrodes. A series of experiments indicates that the phenomena are strongly related to the properties of the interface between metal electrodes and films.

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