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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 19, Issue 8
Displaying 1-5 of 5 articles from this issue
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  • Vacuum Pumping System of Large Space Chamber
    Shinpachi NISHIKAWA, Yasuro KANAMORI, Shoji SAKAKIBARA
    1976 Volume 19 Issue 8 Pages 257-267
    Published: August 20, 1976
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.257
    JOURNAL FREE ACCESS
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  • Fundamental Characteristics of Ion Plating Method and the Crystal Growth
    Makio KATO, Nobuo UMEMIYA, Makoto SAKATA
    1976 Volume 19 Issue 8 Pages 268-273
    Published: August 20, 1976
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.268
    JOURNAL FREE ACCESS
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    Ion plating method was described by D. M. Mattox (1963) and has been examined by various researchers from different point of view. The practical use of ion plating method, whose value is well recognized, has been widely applied to the field of industry.
    In this paper, the study of hf ion plating method is experimentally described, and the structure of copper layers, which is grown on silicon wafers and glass plates by the method under various conditions, is determined by the X-ray diffraction method.
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  • Compositional Changes in an Oxide Thin-Film Formed on Dilute Copper Alloys
    Teiichi HOMMA, Hazime SHIMIZU, Shigeki MATSUNAGA, Akihiro TANAKA
    1976 Volume 19 Issue 8 Pages 274-279
    Published: August 20, 1976
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.274
    JOURNAL FREE ACCESS
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    The Auger electron microanalysis technique has been applied to investigate the compositional change in oxide thin films formed on dilute copper alloys which contain aluminum. In oxidation at 300°C in oxygen pressure of 10 Torr, the grain boundary in the metal played an important role as a short circuit diffusion path. That is, a selective oxidation occured at grain boundary, in spite of such a low aluminum content as 0.05 wt%. The compositional distribution of aluminum changed in depth-direction and showed some depletion near the metal-oxide interface. The results revealed that these films formed at low temperature may have compositional distributions remote from those formed at high temperature. And the technique has been proved to be a valuable one in studying the process of low temperature oxidation.
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  • Correction of Secondary Ion Intensity by the Total Ion Monitoring Method
    Hifumi TAMURA, Tohru ISHITANI, Ichiro KANOMATA, Kenichi SUZUKI, Atsush ...
    1976 Volume 19 Issue 8 Pages 280-288
    Published: August 20, 1976
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.280
    JOURNAL FREE ACCESS
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    The total ion monitoring method (TIM) has been developed for correction of secondary ion intensity changes which depend on primary ion beam current fluctuations, sample surface topography and transformed surface layers.
    The principle of the TIM is to eliminate the influence of the sample surface conditions by rationing emitted total ions and the specific ions to be analyzed.
    From experimental results it was apparent that this method has the following advantages :
    (1) It proved, at least quantitatively, that the TIM could be effectively used for the correction of specificion intensity changes due to primary ion current fluctuat ion and sample surface topography.
    (2) In-depth analysis of thin surface layers of boron doped silicon and tellurium doped gallium arsenide single crystal were carried out. Considerably good agreement with real distribution was obtained by the use of this method.
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  • A Retarding Field Analyzer-Quadrupole Mass Filter for Studying Energy Distribution of Thermal Ion
    Mitsuru ASANO, Toshio HARADA, Kenji KUBO, Yoshitaka HAYASHI
    1976 Volume 19 Issue 8 Pages 289-290
    Published: August 20, 1976
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.19.289
    JOURNAL FREE ACCESS
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    A specially designed retarding field analyzer has been set in the front of a quadrupole mass filter for studying the energy distribution of thermal ion emitted from a hot metal surface. The distribution curve is obtained by the technique of electrical differentiation of the retarding plot in which a small modulating voltage is applied to the two retarding grids in a method similar to Auger electron spectroscopy with a four-grid low-energy electron diffraction system. The technique has been applied to study the energy distribution curve of K+ thermal ion emitted from a tungsten ribbon. The curve is Maxwellian in full region of retarding field. The value of retarding potential at maximum peak corresponds to the contact potential difference between the ribbon emitter and the retarding grid.
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