真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
20 巻, 10 号
選択された号の論文の3件中1~3を表示しています
  • 西田 啓一
    1977 年 20 巻 10 号 p. 338-350
    発行日: 1977/10/20
    公開日: 2009/09/04
    ジャーナル フリー
  • 入戸野 修, 清水 三郎
    1977 年 20 巻 10 号 p. 351-357
    発行日: 1977/10/20
    公開日: 2009/09/04
    ジャーナル フリー
    A new X-ray topographic technique of measuring the lattice mismatches between epitaxial films and substrates is reported. The X-ray beams diffracted from the epitaxial film and the substrate at each point of the specimen are recorded on a photographic film at four incident azimuths making 90° to each other by a double-crystal arrangement of non-parallel (+, -) setting, and the local variations in the spacing and the crystallographic orientation of the net planes are separately analyzed. In the present study, for the first crystal were employed various reflections of nearly perfect Si (111) and (100) slices which are usually used for solid state devices. The present technique is simple in mechanism and allows us to study any reflection of various kinds of crystals, in which the fractional variation of spacing Δd/d is of the order of 10-410-5. This technique is applied to study the lattice mismatches between epitaxial garnet films and gadolinium gallium garnet substrates. The apparent symmetry of the epitaxial garnet film was found to be rhombohedral on account of an elastic deformation induced by the lattice mismatch between film and substrate.
  • 柴田 久雄
    1977 年 20 巻 10 号 p. 358-364
    発行日: 1977/10/20
    公開日: 2009/09/04
    ジャーナル フリー
    In order to investigate recrystalization processes in obtaining photoconduction, evaporated CdS films have been annealed; the photosensitivity and the spectro-photosensitivity of the films have been measured. Dark resistivities in excess of 106Ω cm have been obtained by the heat-treated at 500 °C for 30 minutes in air. In the heat-treated films, a remarkable increase in photosensitivity is produced. The photosensitivity is strongly dependent on the resistivity of films, and it is independent of evaporation rate, substrate temperature, film thickness, and heat treatment conditions. The photosensitivity increases monotonically as the resistivity increases, but photoconductivity is not recognized below the resistivities of 104Ω cm. The characteristics of spectro-photosensitivity of CdS films show the maximum sensitivity at the wavelength of 5340Å. In films treated in air, photocurrent decreases remarkably in the range of the wavelength from approximately 5100Å to 5300Å. On the other hand, such a phenomenon is not observed in films treated in vacuum. Therefore, photoconducting properties of CdS films are found to be profoundly influenced by oxygen sorption due to annealing.
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