RF planar magnetron sputtering apparatus has been used to prepare transparent conductive SnO
2 films on glass, using Sb-doped SnO
2 targets. The deposition rate, electrical properties, optical properties, and crystal structures (by X-ray diffraction) of the films have been investigated in relation to various sputtering conditions. By this technique, much higher deposition rate (above 1000 Å/min.) than those reported in the past has been achieved, satisfying both low electrical resistivity (2-3×10
-3 Ωcm) and high visible transmission (80-90%). The highly oriented (101) SnO
2 films previously not reported have shown the lowest electrical resistivity. In order to obtain such high conductive SnO
2 films at higher rates, it is required to find an optimum oxygen partial pressure, depending upon the deposition rate.
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